Al x Ga1 ?x As/GaAs(100) hetermostructures with anomalously high carrier mobility

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• 作者：P. V. Seredin ; D. L. Goloshchapov ; A. S. Lenshin ; V. E. Ternovaya…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：49
• 期：8
• 页码：1019-1024
• 全文大小：206 KB
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• 作者单位：P. V. Seredin (1)
  D. L. Goloshchapov (1)
  A. S. Lenshin (1)
  V. E. Ternovaya (1)
  I. N. Arsentyev (2)
  D. N. Nikolaev (2)
  I. S. Tarasov (2)
  V. V. Shamakhov (2)
  A. V. Popov (3)
  
  1. Voronezh State University, Voronezh, 394006, Russia
  2. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
  3. Research Institute of Electronics, Voronezh, 394033, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

Structural and spectroscopic methods are used to study the epitaxial layers of n-type Al x Ga1 ?x As solid solutions produced by the metal-organic chemical vapor deposition method. It is shown that, when Al x Ga1 ?x As solid solutions are doped with carbon to a level of (1.2-.7) × 1017 cm?, the electron mobility is anomalously high for the given impurity concentration and twice exceeds the calculated value. It is assumed that the ordered arrangement of carbon in the metal sublattice of the solid solution leads to a change in the average distance between impurity ions, i.e., to an increase in the mean free path of the carriers and, consequently, in the carrier mobility. The observed effect has immediate practical importance in the search for various technological ways of increasing the operating speed of functional elements of modern optoelectronic devices. The effect of the anomalously high carrier mobility in the epitaxial layer of a heteropair opens up new opportunities for the development of new structures on the basis of Al x Ga1 ?x As compounds.