Epitaxial Al_{plus-plus"> plus-plus">x} Ga_{plus-plus">1 – plus-plus">x} As:Mg alloys with different conductivity types

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• 作者：P. V. Seredin ; A. S. Lenshin ; I. N. Arsentiev ; A. V. Zhabotinskii…
• 刊名：Semiconductors
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：51
• 期：1
• 页码：122-130
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Magnetism, Magnetic Materials; Physics, general;
• 出版者：Pleiades Publishing
• ISSN：1090-6479
• 卷排序：51

文摘

The structural, optical, and energy properties of epitaxial Al_xGa_{1 – x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al_xGa_{1–phasisTypeItalic ">x}As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.