Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights

详细信息    查看全文

• 作者：Fei Liu (1) (2)
  Lifang Li (1) (2)
  Tongyi Guo (1) (2)
  Haibo Gan (1) (2)
  Xiaoshu Mo (1) (2)
  Jun Chen (1) (2)
  Shaozhi Deng (1) (2)
  Ningsheng Xu (1) (2)
  
• 关键词：UAN ; Photoconductive behaviors ; Different wavelengths of illumination
• 刊名：Nanoscale Research Letters
• 出版年：2012
• 出版时间：December 2012
• 年：2012
• 卷：7
• 期：1
• 全文大小：807KB
• 参考文献：1. Zhai TY, Fang XS, Liao MY, Xu XJ, Li L, Liu BD, Koide Y, Ma Y, Yao JN, Bando Y, Golberg D: Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors. / ACS Nano 2010, 4:1596-602. CrossRef
  2. Fang XS, Xiong SL, Zhai TY, Bando Y, Liao MY, Gautam UK, Koide Y, Qian YT, Zhang XG, Golberg D: High-performance blue/ultraviolet-light-sensitive ZnSe-nanobelt photodetectors. / Adv Mater 2009, 21:5016-021. CrossRef
  3. Li L, Wu PC, Fang XS, Zhai TY, Dai L, Liao MY, Koide Y, Wang HQ, Bando Y, Golberg D: Single-crystalline CdS nanobelts for excellent field-emitters and ultrahigh quantum-efficiency photodetectors. / Adv Mater 2010, 22:3161-165. CrossRef
  4. Liao ZM, Xu J, Zhang JM, Yu DP: Photovoltaic effect and charge storage in single ZnO nanowires. / Appl Phys Lett 2008, 93:023111. 1- CrossRef
  5. Davis RF: III-V nitrides for electronic and optoelectronic applications. / Proc. IEEE. 1991, 79:702-12. CrossRef
  6. Zhirnov VV, Wojak GJ, Choi WB, Cuomo JJ, Hren JJ: Wide band gap materials for field emission devices. / J Vac Sci Technol A 1997, 15:1733-738. CrossRef
  7. Kang D, Zhirnov VV, Sanwald RC, Hren JJ, Cuomo JJ: Field emission from ultrathin coatings of AlN on Mo emitters. / J Vac Sci Technol B 2001, 19:50-4. CrossRef
  8. Nicolaescu IV, Tardos G, Riman RE: Thermogravimetric determination of carbon, nitrogen, and oxygen in aluminum nitride. / J Am Ceram Soc 1994, 77:2265-272. CrossRef
  9. Zheng J, Yang Y, Yu B, Song XB, Li XG: [0001] Oriented aluminum nitride one-dimensional nanostructures: synthesis, structure evolution, and electrical properties. / ACS Nano 2008, 2:134-42. CrossRef
  10. Tang YB, Bo XH, Xu J, Cao YL, Chen ZH, Song HS, Liu CP, Hung TF, Zhang WJ, Cheng HM, Bello I, Lee ST, Lee CS: Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping. / ACS Nano 2011, 5:3591-598. CrossRef
  11. Thapa R, Saha B, Das NS, Maiti UN, Chattopadhyay KK: Self filling of Ni nanoparticles in amorphous AlN nanotubes and its field emission property. / Appl Surf Sci 2010, 256:3988-992. CrossRef
  12. Liu F, Su ZJ, Mo FY, Li L, Chen ZS, Liu QR, Chen J, Deng SZ, Xu NS: Controlled growth of ultra-long AlN nanowires in different densities and in-situ investigation on the physical properties of an individual AlN nanowire. / Nanoscale 2011, 3:610-18. CrossRef
  13. Liu F, Su ZJ, Liang WJ, Mo FY, Li L, Deng SZ, Chen J, Xu NS: Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies. / Chin Phys B 2009, 5:2016-023.
  14. Liu F, Su ZJ, Li L, Mo FY, Jin SY, Deng SZ, Chen J, Shen CM, Gao HJ, Xu NS: Effect of contact mode on the electrical transport and field-emission performance of individual boron nanowire. / Adv Funct Mater 2010, 20:1994-003. CrossRef
  15. Liu F, Tian JF, Bao LH, Yang TZ, Shen CM, Lai XY, Xiao ZM, Xie WG, Deng SZ, Chen J, She JC, Xu NS, Gao HJ: Fabrication of vertically aligned single crystalline boron nanowire arrays and investigation on their field emission behaviors. / Adv. Mater 2008, 20:2609-615. CrossRef
  16. Xu CK, Xue L, Yin CR, Wang GH: Formation and photoluminescence properties of AlN nanowires. / Phys Stat Sol (a) 2003, 198:329-35. CrossRef
  17. Edgar JH: / Properties of Group III Nitrides. London: INSPEC Publishing; 1994.
  18. Shi SC, Chen CF, Chattopadhyay S, Chen KH, Ke BW, Chen LC, Trinkler L, Berzina B: Luminescence properties of wurtzite AlN nanotips. / Appl Phys Lett 2006, 89:163127. 163 CrossRef
  19. Youngman RA, Harris JH: Luminescence studies of oxygen-related defects in aluminum nitride. / J Am Ceram Soc 1990, 73:3238-246. CrossRef
  20. Harris JH, Youngman RA, Teller RG: On the nature of oxygen-related defects in aluminum nitride. / J Mater Res 1990, 5:1763-773. CrossRef
  21. Mattila T, Nieminen RM: Ab initio study of oxygen point defects in GaAs, GaN, and AlN. / Phys Rev B 1996, 54:16676-6682. CrossRef
  22. Soci C, Zhang A, Xiang B, Dayeh SA, Aplin DPR, Park J, Bao XY, Lo YH, Wang D: ZnO nanowire UV photodetectors with high internal gain. / Nano lett 2007, 7:1003-009. CrossRef
  23. Mathur S, Barth S, Shen H, Pyun JC, Werner U: Size-dependent photoconductance in SnO2 nanowires. / Small 2005, 1:713-17. CrossRef
  24. Huang HM, Chen RS, Chen HY, Liu TW, Kuo CC, Chen CP, Hsu HC, Chen LC, Chen KH, Yang YJ: Photoconductivity in single AlN nanowires by subband gap excitation. / Appl Phys Lett 2010, 96:062104-04. CrossRef
  25. Penchina CM, Moore JS, Holonyak N: Energy levels and negative photoconductivity in cobalt-doped silicon. / Phys Rev 1966, 143:634-36. CrossRef
  26. Rose A: / Concepts in Photoconductivity and Allied Problems. New York: Krieger Publishing Company; 1978.
  27. Cheng JP, Zhang YJ, Guo RY: ZnO microtube ultraviolet detectors. / J Cryst Growth 2008, 310:57-1. CrossRef
  28. Ueda T, An HZ, Hirakawa K, Komiyama S: Charge-sensitive infrared phototransistors: characterization by an all-cryogenic spectrometer. / J Appl Phys 2008, 103:093109--. CrossRef
  
• 作者单位：Fei Liu (1) (2)
  Lifang Li (1) (2)
  Tongyi Guo (1) (2)
  Haibo Gan (1) (2)
  Xiaoshu Mo (1) (2)
  Jun Chen (1) (2)
  Shaozhi Deng (1) (2)
  Ningsheng Xu (1) (2)
  
  1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou, 510275, People’s Republic of China
  2. School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, People’s Republic of China
  
• ISSN：1556-276X

文摘

Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization effect. It is found that they have a much faster response speed (a rise and decay time of about 1 ms), higher photocurrent response (2.7×106), and more reproductive working performance (the photocurrent fluctuation is lower than 2%) in the air environment. Their better photoconductive performances are comparable to many nanostructures, which are suggested to be a candidate for building promising photosensitive nanodevices in the future.