Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1↿em>x Zn x O2 delaf
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- 作者：Ya-Hui Chuai ; Xin Wang ; Hong-Zhi Shen ; Ya-Dan Li…
- 刊名：Journal of Materials Science
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：51
- 期：7
- 页码：3592-3599
- 全文大小：2,438 KB
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Xin Wang (1)
Hong-Zhi Shen (1)
Ya-Dan Li (2)
Chuan-Tao Zheng (1) (3)
Yi-Ding Wang (1)
1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China
2. College of Physics, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China
3. Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, TX, 77005, USA - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Materials Science
Characterization and Evaluation Materials
Polymer Sciences
Continuum Mechanics and Mechanics of Materials
Crystallography
Mechanics - 出版者：Springer Netherlands
- ISSN：1573-4803
文摘
Delafossite-type CuCr1−lic ">x Zn x O2 (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr1−lic ">x Zn x O2 oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum, the crystalline quality of the oxides is improved by the suitable substitution of Cr by Zn. The X-ray photoelectron spectroscopy (XPS) spectra reveal the chemical state of Zn is +2. The Hall and Seebeck coefficients of the pellet samples display a positive sign, indicating p-type conductive characteristics of the obtained oxides. The temperature-dependent resistivity of the oxides is proven to be consistent with small polaron hopping. For the three oxide samples with x = 0, 0.05, and 0.1, the activation energies for the polaron hopping between Zn2+ and Cr3+ sites are 54, 41.5, 32 meV, respectively, which is found to decrease with the increase of Zn content. The electrical conductivity can be remarkably improved by Zn-doping due to the small polaron hopping activation energy. These properties render this material promising as transparent electrode in optoelectronic industry.