Electron emission properties of cold cathodes based on porous silicon layer processed by electrochemical oxidation and high-pressure water vapor annealing

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• 作者：Wenbo Hu ; Xiaolei Zhao ; Jinlong Fan ; Shengli Wu…
• 关键词：Porous silicon ; Electrochemical oxidation ; High ; pressure water vapor annealing ; Cold cathode
• 刊名：Journal of Porous Materials
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：22
• 期：3
• 页码：761-767
• 全文大小：1,702 KB
• 参考文献：1.W.K. Yue, D.L. Parker, M.H. Weichold, Technical Digest-International Electron Devices Meeting, California. USA, 167 (1990)
  2.H. Kim, J.-W. Park, J.-W. Lee, Y.-H. Lee, B.-K. Ju, M.-H. Oh, Y.-H. Song, J.-H. Lee, K.-I. Cho, J. Jang, Society for Information Display 2002 Inernational Symposium, Boston, USA, 365 (2002)
  3.I.-H. Jang, J.E. Kim, G.-H. Ryu, S.-Y. Choi, Mol. Cryst. Liq. Cryst. 499, 160 (2009)View Article
  4.T. Ichihara, T. Hatai, N. Koshida, J. SID 18(3), 223 (2010)
  5.N. Mori, H. Minari, S. Uno, H. Mizuta, N. Koshida, Appl. Phys. Lett. 98, 062104 (2011)View Article
  6.T. Komoda, Y. Honda, T. Ichihara, T. Hatai, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, N. Koshida, Society for Information Display 2002 Inernational Symposium, Boston, USA, 1128 (2002)
  7.F. Zhong, Z.-H. Jia, Phys. B 411, 77 (2013)View Article
  8.A. Kojima, N. Koshida, Appl. Phys. Lett. 86, 022102 (2005)View Article
  9.T. Komoda, T. Ichihara, Y. Honda, T. Hatai, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, N. Koshida, J. SID 12(1), 29 (2004)
  10.Y.J. Zhang, X.N. Zhang, W.J. Wang, C.L. Liu, J. Nanosci. Nanotechnol. 12(8), 6548 (2012)View Article
  11.X. Sheng, A. Kojima, T. Komoda, N. Koshida, J. Vac. Sci. Technol. B 19(1), 64 (2001)View Article
  12.X. Sheng, H. Koyama, N. Koshida, J. Vac. Sci. Technol. B 16(2), 793 (1998)View Article
  13.T. Ichihara, T. Hatai, K. Aizawa, T. Komoda, A. Kojima, N. Koshida, J. Vac. Sci. Technol. B 22(1), 57 (2004)View Article
  14.T. Ichihara, Y. Honda, T. Baba, T. Komoda, N. Koshida, J. Vac. Sci. Technol. B 22(4), 1784 (2004)View Article
  15.T. Ichihara, Y. Honda, T. Baba, Y. Takegawa, Y. Watabe, T. Hatai, K. Aizawa, T. Komoda, V. Vezin, N. Koshida, The Ninth International Display Workshops. Hiroshima, Japan, 1033 (2002)
  16.S.K. Han, S.I. Kwon, S.C. Bae, S.Y. Choi, The 11th International Display Workshops. Niigata, Japan, 1233 (2004)
  17.T. Ohta, A. Kojima, N. Koshida, J. Vac. Sci. Technol. B 25(2), 524 (2007)View Article
  18.X.G. Zhang, Electrochemistry of Silicon and Its Oxide (Kluwer Academic/Plenum Publishers, New York, 2001)
  19.W. Luo, W.B. Hu, Z. Yang, Z.X. Song, H.Y. Wu, Asia Display 2011. Kunshan, China, 693 (2011)
  20.B. Gelloz, N. Koshida, J. Appl. Phys. 98, 123509 (2005)View Article
  21.B. Gelloz, A. Kojima, N. Koshida, Appl. Phys. Lett. 87, 031107 (2005)View Article
  
• 作者单位：Wenbo Hu (1)
  Xiaolei Zhao (1)
  Jinlong Fan (1)
  Shengli Wu (1)
  Jingtao Zhang (1)
  
  1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi鈥檃n Jiaotong University, Xi鈥檃n, 710049, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Catalysis
  Characterization and Evaluation Materials
  Physical Chemistry
  
• 出版者：Springer Netherlands
• ISSN：1573-4854

文摘

Porous silicon (PS) layers were processed by electrochemical oxidation (ECO) and high-pressure water vapor annealing (HWA) after they were prepared on n+-type silicon substrates with the double-cell anodic etching technique. The cathodes with a multilayer structure of Pt/PS layer/n+-Si/ohmic-contact electrode were fabricated, and their electron emission properties were investigated. The experimental results showed that it is difficult to get a sufficient and uniform oxidation for a PS layer by merely using ECO, while HWA can assist ECO to improve the oxidation quality of the PS layer, and the emission current density and efficiency of the porous silicon cathode can be increased by the combined treatment of HWA and ECO.