InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
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- 作者：Zhenhua Li (1)
Jiang Wu (2)
Zhiming M. Wang (1)
Dongsheng Fan (2)
Aqiang Guo (1)
Shibing Li (2)
Shui-Qing Yu (2)
Omar Manasreh (1) (2)
Gregory J. Salamo (1) (2) - 关键词：Photoluminescence ; Quantum well ; High ; index surfaces ; Superluminescent diode ; Atomic force microscopy
- 刊名：Nanoscale Research Letters
- 出版年：2010
- 出版时间：June 2010
- 年：2010
- 卷：5
- 期：6
- 页码：1079-1084
- 全文大小：743KB
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Jiang Wu (2)
Zhiming M. Wang (1)
Dongsheng Fan (2)
Aqiang Guo (1)
Shibing Li (2)
Shui-Qing Yu (2)
Omar Manasreh (1) (2)
Gregory J. Salamo (1) (2)
1. Arkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA - ISSN：1556-276X
文摘
The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950?nm) with a full width at half maximum (FWHM) of 48?nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM?=?7.8?nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.