Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes

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• 作者：Shibo Zhang ; Yanli Zhao
• 关键词：Avalanche photodiode ; Impact ionization ; Charge layer
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：47
• 期：8
• 页码：2689-2696
• 全文大小：636 KB
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• 作者单位：Shibo Zhang (1)
  Yanli Zhao (1)
  
  1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

Impact ionization in charge layer of InP/InGaAs separated absorption, grading, charge and multiplication avalanche photodiodes (SAGCM APDs) has been studied by analytical-band Monte Carlo (MC) simulations. The mean ionization coefficients are derived by MC model and compared with the mean ionization coefficients calculated from electric-field-dependent ionization coefficient. And modification of ionization coefficient is made to extend the ionization-coefficient-based models for the simulations of charge layer in SAGCM APDs, which releases intensive calculation in structure optimization by MC simulations. Keywords Avalanche photodiode Impact ionization Charge layer