Tuning the dimensionality of ZnO nanowires through thermal treatment: An investigation of growth mechanism

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• 作者：Po-Hsun Shih (1)
  Hsuan-Jung Hung (1)
  Yuan-Ron Ma (1)
  Sheng-Yun Wu (1)
  
• 关键词：nanocrystalline materials ; short ; circuit diffusion ; lattice diffusion ; nanowires ; ZnO ; 61.46.Hk ; 61.82.Fk ; 62.23.Hj ; 66.30.Pa
• 刊名：Nanoscale Research Letters
• 出版年：2012
• 出版时间：December 2012
• 年：2012
• 卷：7
• 期：1
• 全文大小：643KB
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• 作者单位：Po-Hsun Shih (1)
  Hsuan-Jung Hung (1)
  Yuan-Ron Ma (1)
  Sheng-Yun Wu (1)
  
  1. Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan
  
• ISSN：1556-276X

文摘

In this study, we synthesized various dimensionalities of ZnO nanowires using the Ti grid-assisted chemical vapor deposition process. Energy dispersive X-ray spectroscopic mapping technique accompanied with a lattice diffusion model was used to characterize the growth mechanism. A diffusion ratio γ, defined by short-circuit and lattice diffusion activation energies, was obtained to describe the growth mechanism of ZnO nanowires. The tunable dimensionalities of ZnO nanowires allow us to modify the morphology of ZnO nanocrystals by developing well-controlled potential applications.