Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga+ ion beam
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- 作者：Wenqing Li (1)
Lei Liao (1)
Xiangheng Xiao (1)
Xinyue Zhao (1)
Zhigao Dai (1)
Shishang Guo (1)
Wei Wu (1)
Ying Shi (1)
Jinxia Xu (1)
Feng Ren (1)
Changzhong Jiang (1) - 关键词：nanowire ; field ; effect transistor ; ion irradiation ; threshold voltage
- 刊名：Nano Research
- 出版年：2014
- 出版时间：November 2014
- 年：2014
- 卷：7
- 期：11
- 页码：1691-1698
- 全文大小：2,313 KB
- 参考文献：1. Goldberger, J.; Sirbuly, D. J.; Law, M.; Yang, P. D. ZnO nanowire transistors. / J. Phys. Chem. B 2005, / 109, 9-4. CrossRef
2. Jiang, C. Y.; Sun, X. W.; Tan, K. W.; Lo, G. Q.; Kyaw, A. K. K.; Kwong, D. L. High-bendability flexible dye-sensitized solar cell with a nanoparticle-modified ZnO-nanowire electrode. / Appl. Phys. Lett. 2008, / 92, 143101. CrossRef
3. Kuang, Q.; Lao, C. S.; Wang, Z. L.; Xie, Z. X.; Zheng, L. S. High-sensitivity humidity sensor based on a single SnO2 nanowire. / J. Am. Chem. Soc. 2007, / 129, 6070-071. CrossRef
4. Zhang, D. H.; Liu, Z. Q.; Li, C.; Tang, T.; Liu, X. L.; Han, S.; Lei, B.; Zhou, C. W. Detection of NO2 down to ppb levels using individual and multiple In2O3 nanowire devices. / Nano Lett. 2004, / 4, 1919-924. CrossRef
5. Park, C. H.; Lee, G.; Lee, K. H.; Im, S.; Lee, B. H.; Sung, M. M. Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface. / Appl. Phys. Lett. 2009, / 95, 153502. CrossRef
6. Lin, M. C.; Chu, C. J.; Tsai, L. C.; Lin, H. Y.; Wu, C. S.; Wu, Y. P.; Wu, Y. N.; Shieh, D. B.; Su, Y. W.; Chen, C. D. Control and detection of organosilane polarization on nanowire field-effect transistors. / Nano Lett. 2007, / 7, 3656-661. CrossRef
7. Xiang, J.; Lu, W.; Hu, Y. J.; Wu, Y.; Yan, H.; Lieber, C. M. Ge/Si nanowire heterostructures as high-performance field-effect transistors. / Nature 2006, / 441, 489-93. CrossRef
8. Ho, J. C.; Yerushalmi, R.; Jacobson, Z. A.; Fan, Z. Y.; Alley, R. L.; Javey, A. Controlled nanoscale doping of semiconductors via molecular monolayers. / Nat. Mater. 2007, / 7, 62-7. CrossRef
9. Liao, L.; Bai, J. W.; Lin, Y. C.; Qu, Y. Q.; Huang, Y.; Duan, X. F. High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics. / Adv. Mater. 2010, / 22, 1941-945. CrossRef
10. Liao, L.; Lin, Y. C.; Bao, M. Q.; Cheng, R.; Bai, J. W.; Liu, Y.; Qu, Y. Q.; Wang, K. L.; Huang, Y.; Duan, X. F. High-speed graphene transistors with a self-aligned nanowire gate. / Nature 2010, / 467, 305-08. CrossRef
11. Teweldebrhan, D.; Balandin, A. A. Modification of graphene properties due to electron-beam irradiation. / Appl. Phys. Lett. 2009, / 94, 013101. CrossRef
12. Marquardt, C. W.; Dehm, S.; Vijayaraghavan, A.; Blatt, S.; Hennrich, F.; Krupke, R. Reversible metal-insulator transitions in metallic single-walled carbon nanotubes. / Nano Lett. 2008, / 8, 2767-772. CrossRef
13. Park, G. S.; Lee, E. K.; Lee, J. H.; Park, J.; Kim, S. K.; Li, X. S.; Park, J. C.; Chung, J. G.; Jeon, W. S.; Heo, S. et al. A high-density array of size-controlled silicon nanodots in a silicon oxide nanowire by electron-stimulated oxygen expulsion. / Nano Lett. 2009, / 9, 1780-786. CrossRef
14. Gómez-Navarro, C.; De Pablo, P. J.; Gómez-Herrer - 作者单位：Wenqing Li (1)
Lei Liao (1)
Xiangheng Xiao (1)
Xinyue Zhao (1)
Zhigao Dai (1)
Shishang Guo (1)
Wei Wu (1)
Ying Shi (1)
Jinxia Xu (1)
Feng Ren (1)
Changzhong Jiang (1)
1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China - ISSN：1998-0000
文摘
In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga+ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors (FETs) shift in the negative gate voltage direction after Ga+ ion irradiation. Smaller threshold voltages, achieved by Ga+ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga+ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to ?06. The results indicate that Ga+ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.