Effect of cation and anion defects on the resistive switching polarity of ZnO x thin films
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- 作者：Xinghui Wu (1)
Zhimou Xu (1)
Binbing Liu (1)
Tangyou Sun (1)
Wenning Zhao (1)
Sisi Liu (1)
Zhichao Ma (1)
Fei Zhao (1)
Shuangbao Wang (1)
Xueming Zhang (1)
Shiyuan Liu (2)
Jing Peng (3) - 刊名：Applied Physics A: Materials Science & Processing
- 出版年：2014
- 出版时间：March 2014
- 年：2014
- 卷：114
- 期：3
- 页码：847-852
- 全文大小：929 KB
- 参考文献：1. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009) CrossRef
2. M.-J. Lee, S. Han, S.H. Jeon, B.H. Park, B.S. Kang, S.-E. Ahn, K.H. Kim, C.B. Lee, C.J. Kim, I.-K. Yoo, D.H. Seo, X.-S. Li, J.-B. Park, J.-H. Lee, Y. Park, Nano Lett. 9, 1476 (2009) CrossRef
3. J. Sullaphen, K. Bogle, X. Cheng, J.M. Gregg, N. Valanoor, Appl. Phys. Lett. 100, 203155 (2012) CrossRef
4. J.J. Yang, M.D. Pickett, X.M. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008) CrossRef
5. D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010) CrossRef
6. Y.C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 9, 1636 (2009) CrossRef
7. W.Y. Chang, Y.C. Lai, T.B. Wu, S.F. Wang, F. Chen, M.J. Tsai, Appl. Phys. Lett. 92, 022110 (2008) CrossRef
8. H.K. Yoo, S.B. Lee, J.S. Lee, S.H. Chang, M.J. Yoon, Y.S. Kim, B.S. Kang, M.J. Lee, C.J. Kim, B. Kahng, T.W. Noh, Appl. Phys. Lett. 98, 183507 (2011) CrossRef
9. C. Chen, C. Song, J. Yang, F. Zeng, F. Pan, Appl. Phys. Lett. 100, 253509 (2012) CrossRef
10. L. Goux, J.G. Lisoni, M. Jurczak, D.J. Wouters, L. Courtade, C.聽Muller, J. Appl. Phys. 107, 024512 (2010) CrossRef
11. S. Lee, H. Kim, J. Park, K. Yong, J. Appl. Phys. 108, 076101 (2010) CrossRef
12. C. Chen, F. Pan, Z.S. Wang, J. Yang, F. Zeng, J. Appl. Phys. 111, 013702 (2012) CrossRef
13. S.B. Lee, J.S. Lee, S.H. Chang, H.K. Yoo, B.S. Kang, B. Kahng, M.J. Lee, C.J. Kim, T.W. Noh, Appl. Phys. Lett. 98, 033502 (2011) CrossRef
14. X. Sun, G. Li, X. Zhang, L. Ding, W. Zhang, J. Phys. D, Appl. Phys. 44, 125404 (2011) CrossRef
15. D.S. Jeong, H. Schroeder, R. Waser, Electrochem. Solid-State Lett. 10, G51 (2007) CrossRef
16. L. Goux, Y.Y. Chen, L. Pantisano, X.P. Wang, G. Groeseneken, M. Jurczak, D.J. Wouters, Electrochem. Solid-State Lett. 13, G54 (2010) CrossRef
17. K. Oka, T. Yanagida, K. Nagashima, M. Kanai, B. Xu, B.H. Park, H. Katayama-Yoshida, T. Kawai, J. Am. Chem. Soc. 134, 2535 (2012) CrossRef
18. A. Janotti, C.G. Van de Walle, Phys. Rev. B 76, 165202 (2007) CrossRef
19. Q. Wang, D.S. Shang, Z.H. Wu, L.D. Chen, X.M. Li, Appl. Phys. A, Mater. Sci. Process. 86, 357 (2006) CrossRef
20. D.S. Shang, Q. Wang, L.D. Chen, R. Dong, X.M. Li, W.Q. Zhang, Phys. Rev. B 73, 245427 (2006) CrossRef
21. E.H. Rhoderick, R.H. Williams, / Metal鈥揝emiconductor Contact (Oxford University Press, Oxford, 1988)
22. R.L. David, / CRC Handbook of Chemistry and Physics, 77th edn. (CRC, Boca Raton, 1996鈥?997)
23. H.Y. Jeong, J.Y. Lee, S.-Y. Choi, Appl. Phys. Lett. 97, 042109 (2010) CrossRef
24. R. Yang, X.M. Li, W.D. Yu, X.D. Gao, D.S. Shang, X.J. Liu, X. Cao, Q. Wang, L.D. Chen, Appl. Phys. Lett. 95, 072105 (2009) CrossRef
25. Y.W. Heo, D.P. Norton, S.J. Pearton, J. Appl. Phys. 98, 073502 (2005) CrossRef
26. H. Zeng, Z. Gang, W. Cai, P. Liu, J. Appl. Phys. 102, 104307 (2007) CrossRef
27. K.H. Tam, C.K. Cheung, Y.H. Leung, A.B. Djuri拧i膰, C.C. Ling, C.D. Beling, S. Fung, W.M. Kwok, W.K. Chan, D.L. Phillips, L. Ding, W.K. Ge, J. Phys. Chem. B 110, 20865 (2006) CrossRef
28. Z. Fu, B. Lin, G. Liao, Z. Wu, J. Cryst. Growth 193, 316 (1998) CrossRef
29. C.H. Ahn, Y.Y. Kim, D.C. Kim, S.K. Mohanta, H.K. Cho, J. Appl. Phys. 105, 013502 (2009) CrossRef
30. K.K. Kim, J.H. Song, H.J. Jung, W.K. Choi, S.J. Park, J.Y. Lee, J.聽Vac. Sci. Technol. A 18, 2864 (2000) CrossRef
31. S.-H. Jeong, B.-S. Kim, B.-T. Lee, Appl. Phys. Lett. 82, 2625 (2003) CrossRef
32. P.S. Xu, Y.M. Sun, C.S. Shi, F.Q. Xu, H.B. Pan, Nucl. Instrum. Methods Phys. Res., Sect. B, Beam Interact. Mater. Atoms 199, 286 (2003) CrossRef
33. M.J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.B. Kim, C.J. Kim, D.H. Seo, S. Seo, U.I. Chung, I.K. Yoo, K. Kim, Nat. Mater. 10, 625 (2011) CrossRef - 作者单位：Xinghui Wu (1)
Zhimou Xu (1)
Binbing Liu (1)
Tangyou Sun (1)
Wenning Zhao (1)
Sisi Liu (1)
Zhichao Ma (1)
Fei Zhao (1)
Shuangbao Wang (1)
Xueming Zhang (1)
Shiyuan Liu (2)
Jing Peng (3)
1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, People鈥檚 Republic of China
2. School of Mechanical Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People鈥檚 Republic of China
3. College of Sciences, Wuhan University of Science and Technology, 430081, Wuhan, People鈥檚 Republic of China - ISSN：1432-0630
文摘
In this paper, we achieve the resistive switching (RS) polarity from unipolar to bipolar in a simple Al/ZnO x /Al structure by moderating the oxygen content in the ZnO sputtering process. In a pure Ar sputtering, Al/ZnO x /Al shows unipolar behavior, as oxygen partial pressure increases, the RS polarity changes to bipolar, and the switch current decreases by about five orders of magnitude. The current transport properties of unipolar device show ohmic behavior under both high resistance (HRS) and low resistance states (LRS), but the bipolar device shows Schottky barrier modulated current transport properties. We study the defect types in the unipolar and bipolar devices through photoluminescence (PL) spectra. The PL results show that the interstitial zinc (Zni) and interstitial oxygen (Oi) are dominant in unipolar and bipolar devices, respectively. We attribute this phenomenon to Zni and Oi playing important role in unipolar (URS) and bipolar resistive switching (BRS), respectively.