Direct writing of graphene patterns and devices on graphene oxide films by inkjet reduction

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• 作者：Yang Su ; Shuai Jia ; Jinhong Du ; Jiangtan Yuan ; Chang Liu ; Wencai Ren…
• 关键词：graphene ; graphene oxide ; direct writing ; inkjet printing ; reduction
• 刊名：Nano Research
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：8
• 期：12
• 页码：3954-3962
• 全文大小：2,112 KB
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• 作者单位：Yang Su (1)
  Shuai Jia (1)
  Jinhong Du (1)
  Jiangtan Yuan (1)
  Chang Liu (1)
  Wencai Ren (1)
  Huiming Cheng (1)
  
  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

Direct writing of graphene patterns and devices may significantly facilitate the application of graphene-based flexible electronics. In terms of scalability and cost efficiency, inkjet printing is very competitive over other existing directwriting methods. However, it has been challenging to obtain highly stable and clog-free graphene-based ink. Here, we report an alternative and highly efficient technique to directly print a reducing reagent on graphene oxide film to form conductive graphene patterns. By this “inkjet reduction-method, without using any other microfabrication technique, conductive graphene patterns and devices for various applications are obtained. The ionic nature of the reductant ink makes it clog-free and stable for continuous and large-area printing. The method shows self-limited reduction feature, which enables electrical conductivity of graphene patterns to be tuned within 5 orders of magnitude, reaching as high as 8,000 S·m-. Furthermore, this method can be extended to produce noble metal/graphene composite patterns. The devices, including transistors, biosensors, and surfaceenhanced Raman scattering substrates, demonstrate excellent functionalities. This work provides a new strategy to prepare large-area graphene-based devices that is low-cost and highly efficient, promising to advance research on graphenebased flexible electronics.