Buckling and Delamination of Ti/Cu/Si Thin Film During Annealing
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- 作者：Qijing Lin (1)
Shuming Yang (1)
Weixuan Jing (1)
Changsheng Li (1)
Chenying Wang (1)
Zhuangde Jiang (1)
Kely Jiang (2) - 关键词：Thin Film ; interface reaction ; buckling ; delamination ; microcracks
- 刊名：Journal of Electronic Materials
- 出版年：2014
- 出版时间：September 2014
- 年：2014
- 卷：43
- 期：9
- 页码：3351-3356
- 全文大小：1,158 KB
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Shuming Yang (1)
Weixuan Jing (1)
Changsheng Li (1)
Chenying Wang (1)
Zhuangde Jiang (1)
Kely Jiang (2)
1. State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049, China
2. School of Mechanical Engineering, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK - ISSN：1543-186X
文摘
In this paper, the formation of buckling and delamination of sandwiched stacking of Ti/Cu/Si thin film are investigated. The crystallization structures, the composition of the Cu/Ti thin films, and the surface morphology are measured during annealing. The results show that the solid-phase reaction between Cu and Ti occurs at the interface. Buckling is initiated in the thin film annealed at 600°C. The volume expansion promotes the buckling and further produces microcracks. With increasing volume expansion, there are cavities formed in the middle layer when the annealing temperature is up to 700°C. Finally, thin film is delaminated from the substrate.