Fabrication of nanoscale step height structure using atomic layer deposition combined with wet etching

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• 作者：Chenying Wang ; Shuming Yang ; Weixuan Jing…
• 关键词：atomic layer deposition (ALD) ; wet etching ; step height
• 刊名：Chinese Journal of Mechanical Engineering
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：29
• 期：1
• 页码：91-97
• 全文大小：1,438 KB
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• 作者单位：Chenying Wang (1)
  Shuming Yang (1)
  Weixuan Jing (1)
  Wei Ren (2)
  Qijing Lin (1)
  Yijun Zhang (2)
  Zhuangde Jiang (1)
  
  1. State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049, China
  2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, 710049, China
  
• 刊物主题：Mechanical Engineering; Theoretical and Applied Mechanics; Manufacturing, Machines, Tools; Engineering Thermodynamics, Heat and Mass Transfer; Power Electronics, Electrical Machines and Networks; Electronics and Microelectronics, Instrumentation;
• 出版者：Springer Berlin Heidelberg
• ISSN：2192-8258

文摘

The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition (ALD) and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide (Al₂O₃) is used to fabricate the nanostep. There are three steps of Al₂O₃ in this structure including 8 nm, 18 nm and 44 nm. The thickness of Al₂O₃ film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al₂O₃ film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikalisch-Technische Bundesanstalt (PTB) and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references. Keywords atomic layer deposition (ALD) wet etching step height