New approach to the manufacturing of power microwave bipolar transistors: A computer simulation

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• 作者：Yu. P. Snitovsky ; V. V. Nelayev and V. A. Efremov
• 关键词：PACS numbers 85.40. ; e
• 刊名：Russian Microelectronics
• 出版年：2007
• 出版时间：November, 2007
• 年：2007
• 卷：36
• 期：6
• 页码：409-414
• 全文大小：400.1 KB
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineeringr>Russian Library of Sciencer>
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1608-3415

文摘

A new manufacturing technology for power microwave silicon npn transistors is evaluated by 2D computer simulation in Silvaco’s SSUPREM4. It enables one to increase the effective emitter area, which makes for better power-handling and frequency capabilities, radiation hardness, and common-emitter output characteristics. Advantages of the new technology over the standard one are demonstrated.