Quantitative Analysis of Porosity and Transport Properties by FIB-SEM 3D Imaging of a Solder Based Sintered Silver for a New Microelectronic Component

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• 作者：W. Rmili ; N. Vivet ; S. Chupin ; T. Le Bihan…
• 关键词：Microelectronic component ; sintered silver joint ; FIB ; SEM ; 3D microstructure ; transport properties
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：45
• 期：4
• 页码：2242-2251
• 全文大小：1,843 KB
• 参考文献：1.K.S. Siow, J. Electron. Mater. (2014). doi:10.​1007/​s11664-013-2967-3 .
  2.A. Hu, J.Y. Guo, H. Alarifi, G. Patane, Y. Zhou, G. Compagnini, and C.X. Xu, Appl. Phys. Lett. (2010). doi:10.​1063/​1.​3502604 .
  3.S. Wang, H. Ji, M. Li, and C. Wang, Mater. Lett. 85, 61 (2012).
  4.R.L. Eadie, G.C. Weatherly, and K.T. Aust, Acta Metall. Mater. 26, 759 (1978).
  5.S. Fu, Y. Mei, G.Q. Lu, X. Li, G. Chen, and X. Chen, Mater. Lett. 128, 42 (2014).
  6.D.J. Green, O. Guillon, and J. Rödel, J. Eur. Ceram. Soc. (2008). doi: 10.​1016/​j.​jeurceramsoc.​2007.​12.​012 .
  7.E.A. Wargo, T. Kotaka, Y. Tabuchi, and E.C. Kumbur, J. Power Sources (2013). doi: 10.​1016/​j.​jpowsour.​2013.​04.​153 .
  8.A. Madra, N. El Hajj, and M. Benzeggagh, Compos. Sci. Technol. (2014). doi: 10.​1016/​j.​compscitech.​2014.​02.​009 .
  9.L. Vergara, R. Miralles, J. Gosabez, F.J. Juanes, L.G. Ullate, J.J. Anaya, M.G. Hernandez, and M.A.G. Izquierdo, NDT E Int. 34 (2001).
  10.S. Maalej, Z. Lafhaj, and M. Bouassida, Mech. Res. Commun. (2013). doi: 10.​1016/​j.​mechrescom.​2013.​03.​002 .
  11.W. Shen, L. Feng, A. Lei, Z. Liu, and Y. Chen, Ceram Int. (2014). doi: 10.​1016/​j.​ceramint.​2013.​07.​034 .
  12.S.B. Rane, T. Seth, G.J. Phatak, D.P. Amalnerkar, and B.K. Das, Mater. Lett. 57, 3096 (2003). doi: 10.​1016/​S0167-577X(03)00003-X .
  13.J. Li, C.M. Johnson, C. Buttay, W. Sabbah, and S. Azzopardi, J. Mater. Process. Technol. (2015). doi: 10.​1016/​j.​jmatprotec.​2014.​08.​002 .
  14.A. Dubnika and V. Zalite, Ceram. Int. 40 (2014).
  15.T.S. Yeoh, N.A. Ives, N. Presser, G.W. Stupian, M.S. Leung, J.L. McCollum, and F.W. Hawley, J. Vac. Sci. Technol., B 25, 3 (2007).CrossRef
  16.L. Holzer, B. Muench, M. Wegmann, P.H. Gasser, and R.J. Flatt, J. Am. Ceram. Soc. 89, 2577 (2006).
  17.M.D. Abramoff, P.J. Magalhaes, and S.J. Ram, Biophotonics Int. 11, 7 (2004).
  18.G. Desbois, J.L. Urai, and P.A. Kukla, Earth Discuss. 4 1, 19 (2009).
  19.L. Tomutsa and V. Radmilovic (Publishing eScholarship University of California, 2003). http://​escolarship.​org/​uc/​item/​4045j24n [Accessed 24/11/2015].
  20.E. Keehan, L. Karlsson, H.K.D.H. Bhadeshia, and M. Thuvander, Mater. Charact. 59, 877 (2008).
  21.G. Knott, H. Marchman, D. Wall, and B. Lich, J. Neurosci. 28, 12 (2008).CrossRef
  22.L. Holzer, F. Indutny, P. Gasser, B. Munch, and M. Wegman, J. Microsc. 216, 84 (2004).
  23.S. Cao, W. Tirry, W. Van Den Broek, and D. Schryvers, J. Microsc. 223, 61 (2009).
  24.M.D. Uchic, M.A. Groeber, D.M. Dimiduk, and J.P. Simmons, Scripta Mater. 55, 1 (2006).CrossRef
  25.S.S. Ray, Polymer. 51, 3966 (2010)
  26.J.R. Wilson, W. Kobsiriphat, R. Mendoza, H.-Y. Chen, J.M. Hiller, D.J. Miller, K. Thornton, P.W. Voorhees, S.B. Alder, and S.A. Barnett, Nat. Mater. 5, 541 (2006).
  27.J.R. Wilson, A.T. Duong, M. Gameiro, H.-Y. Chen, D.R. Mumm, and S.A. Barnett, Electrochem. Commun. 11, 1052 (2009)
  28.N. Vivet, S. Chupin, E. Estrade, T. Piquero, P.L. Pommier, D. Rochais, and E. Bruneton, J. Power Sources 196, 7541 (2011).
  29.N. Vivet, S. Chupin, E. Estrade, A. Richard, S. Bonnamy, D. Rochais, and E. Bruneton, J. Power Sources 196 (2011).
  30.P.R. Shearing, J. Golbert, R.J. Chater, and N.P. Brandon, Chem. Eng. Sci. 64, 3928 (2009).
  31.H. Iwai, N. Shikazono, T. Matsui, H. Teshima, M. Kishimoto, R. Kishida, D. Hayashi, K. Matsuzaki, D. Kanno, M. Saito, H. Muroyama, K. Eguchi, N. Kasagi, and H. Yoshida, J. Power Sources 195, 955 (2010).
  32.J.R. Wilson, J.S. Cronin, S.A. Barnett, and S.J. Harris, J. Power Sources 196, 3443 (2011).
  33.P.R. Shearing, L.E. Howard, P.S. Jorgensen, N.P. Brandon, and S.J. Harris, Electrochem. Commun. 12, 374 (2010).
  34.M. Ender, J. Joos, T. Carraro, and E. Ivers-Tiffée, Electrochem. Commun. 13, 166 (2011).
  35.F. Altmann, J. Beyersdorfer, J. Schischka, M. Krause, G. Franz, and L. Kwakman, ISTFA: Conf. Proc. 38th Int. Symp. For Testing and Failure Analysis, Vol. 39 (2012).
  36.T. Hrncir and L. Hladik, ISTFA: Conf. Proc. 39th Int. Symp. For Testing and Failure Analysis, vol. 27 (2013).
  37.A.S. Budiman, H.A.S. Shin, B.J. Kim, S.H. Hwang, H.Y. Son, M.S. Suh, Q.H. Chung, K.Y. Byun, N. Tamura, M. Kunz, and Y.C. Joo, Microelectronics Reliab. 52, 3 (2012).CrossRef
  38.H.A.S. Shin, B.J. Kim, J.H. Kim, S.H. Hwang, A.S. Budiamn, H.Y. Son, K.Y. Byun, N. Tamura, M. Kunz, D.I. Kim, and Y.C. Joo, J. Electron. Mater. 41, 4 (2012).
  39.R. Spolenak, C.A. Volkert, K. Takahashi, S. Fiorillo, J. Miner, and W.L. Brown, MRS Proceedings 594 (1999).
  40.A.S. Budiman, P.R. Besser, C.S. Hau-Riege, A. Marathe, Y.C. Joo, N. Tamura, J.R. Patel, and W.D. Nix, J. Electron. Mater. 38, 3 (2009).CrossRef
  41.A.S. Budiman, C.S. Hau-Riege, W.C. Baek, C. Lor, A. Huang, H.S. Kim, G. Neubauer, J. Pak, P.R. Besse, and W.D. Nix, J. Electron. Mater. 39, 11 (2010).CrossRef
  42.B.C. Valek, J.C. Bravman, N. Tamura, A.A. MacDowell, R.S. Celestre, H.A. Padmore, R. Spolenak, W.L. Brown, B.W. Batterman, and J.R. Patel, Appl. Phys. Lett. 81, 4168 (2002).
  43.A.S. Budiman, N. Li, Q. Wei, J.K. Baldwin, J. Xiong, H. Luo, D. Trugman, Q.X. Jia, N. Tamura, M. Kunz, K. Chen, and A. Misra, Thin Solid Films 519, 13 (2011).CrossRef
  44.M.J. Burek, A.S. Budiman, Z.B. Jahed, N. Tamura, M. Kunz, S. Jin, S. Min, J. Han, G. Lee, C. Zamecnik, and T.Y. Tsui, Mater. Sci. Eng. A. 528, 18 (2011).
  45.Y. Kim, A.S. Budiman, J.K. Baldwin, N.A. Mara, A. Misra, and S.M. Han, J. Electron. Mater. 41 (2012).
  46.A.S. Budiman, S.M. Han, N. Li, Q.M. Wei, P. Dickerson, N. Tamura, M. Kunz, and A. Misra, J. Mater. Research 27, 3 (2012).CrossRef
  47.S. Canovicl, T. Jonsson, M. Halvarsson, and J. Physics, Conference Series. 126, 012054 (2008).CrossRef
  48.P. Hovington, D. Drouin, and R. Gauvin, Scanning 19 (1997).
  49.High performance 3D visualization software, http://​www.​vsg3d.​com [Accessed 24/11/2015]
  50.P.S. Jorgensen, K.V. Hansen, R. Larsen, and J.R. Bowen, Ultramicroscopy 110, 3 (2010).CrossRef
  51.J. Hoshen and R. Kopelman, Phys. Rev. B. 1, 14 (1976).
  52.Y. Nakashima and S. Kamiya, J. Nucl. Sci. Technol. 44, 9 (2007).CrossRef
  53.D. Rochais, G. Le Meur, V. Basini, and G. Domingues, Nucl. Eng. Des. 238, 2839 (2008).
  54.J.M. Ziman, Electrons and Phonons, Chapter␣XI (London: Oxford University Press, 1960).
  55.Z. Zhang (PhD Dissertation, Virginia Tech, 2005).
  56.J. Guofeng and J. Yin, IEEE Trans. Adv. Packag. 30 (2007)
  57.M. Kishimoto, H. Iwai, M. Saito, and H. Hoshida, 216th ECS Meeting, SOFC XI (Vienna, 2009).
  58.J.M. Zalc, S.C. Reyes, and E. Iglesia, Chem. Eng. Sci. 59, 2947 (2004).
  
• 作者单位：W. Rmili (1)
  N. Vivet (2)
  S. Chupin (3)
  T. Le Bihan (3)
  G. Le Quilliec (1)
  C. Richard (1)
  
  1. Laboratoire de Mécanique et Rhéologie EA 2640, Université François Rabelais de Tours, 7 avenue Marcel Dassault, 37200, Tours, France
  2. Laboratoire LAT, ST Microelectronics, 10 rue Thales de Millet, 37100, Tours, France
  3. CEA Le Ripault, BP 16, 37260, Monts, France
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

As part of development of a new assembly technology to achieve bonding for an innovative silicon carbide (SiC) power device used in harsh environments, the aim of this study is to compare two silver sintering profiles and then to define the best candidate for die attach material for this new component. To achieve this goal, the solder joints have been characterized in terms of porosity by determination of the morphological characteristics of the material heterogeneities and estimating their thermal and electrical transport properties. The three dimensional (3D) microstructure of sintered silver samples has been reconstructed using a focused ion beam scanning electron microscope (FIB-SEM) tomography technique. The sample preparation and the experimental milling and imaging parameters have been optimized in order to obtain a high quality of 3D reconstruction. Volume fractions and volumetric connectivity of the individual phases (silver and voids) have been determined. Effective thermal and electrical conductivities of the samples and the tortuosity of the silver phase have been also evaluated by solving the diffusive transport equation.