Synthesis of Porous Silicon Nitride-Boron Nitride Composites by Gel-Casting and PIP
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- 作者：Kun Liu (1)
Changrui Zhang (1)
Bin Li (1)
Siqing Wang (1)
Feng Cao (1) - 关键词：borazine ; boron nitride ; composites ; dielectric ; gel ; casting ; silicon nitride
- 刊名：Journal of Materials Engineering and Performance
- 出版年：2014
- 出版时间：August 2014
- 年：2014
- 卷：23
- 期：8
- 页码：2829-2833
- 全文大小：1,081 KB
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Changrui Zhang (1)
Bin Li (1)
Siqing Wang (1)
Feng Cao (1)
1. Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, Hunan, P.R. China - ISSN：1544-1024
文摘
The Si3N4-BN composites were prepared by gel-casting and precursor infiltration and pyrolysis route using borazine as the precursor. The composition, mechanical, microstructural, and dielectric properties of the composites were investigated. The composites are composed of h-BN, α-Si3N4, and β-Si3N4. The typical density, porosity, flexural strength, elastic modulus, and fracture toughness of the composites are 2.21?g/cm3, 17.8%, 185.59?MPa, 69.13?GPa, and 2.47?MPa?m1/2, respectively. The dielectric constant and loss tangent of the composites are 4.507-4.635 and 1.06?×?10?-1.97?×?10? at the frequency of 7-18?GHz. Desirable properties of the composites have been achieved.