Electronic and optical properties of amorphous GaSe thin films

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• 作者：M. C. Siqueira ; K. D. Machado…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：27
• 期：7
• 页码：7379-7383
• 全文大小：569 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X
• 卷排序：27

文摘

The eletronic and optical properties of amorphous GaSe thin films produced by vacuum evaporation were investigated using X-ray photoemission spectroscopy (XPS) and transmittance spectroscopy techniques. XPS measurements allowed the determination of the valence band energy and showed the chemical bonding and the charge transfer between Se and Ga atoms. Transmittance measurements allowed the determination of the optical gap, refractive index and extinction coefficient in the low and high absorption regions. Using the Wemple and DiDomenico single oscillator model we also found the oscillator and the dispersive energies. From the valence band and optical gap energies, the conduction band was found and an energy level diagram for f-GaSe is proposed.