Impact of defects on local optical dielectric properties of Si/SiO2 interfaces by layered capacitor modeling
详细信息 查看全文
- 作者：Li-mei Rong ; Zhi-jun Meng ; Cong Xiao ; Long Zhou ; Long-huan Du ; Kui Liu…
- 刊名：Applied Physics A: Materials Science & Processing
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：122
- 期：4
- 全文大小：1,334 KB
- 参考文献：1.M. Ieong, B. Doris, J. Kedzierski, K. Rim, M. Yang, Science 306, 2057 (2004)ADS CrossRef
2.G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001)ADS CrossRef
3.A.I. Kingon, J.P. Maria, S.K. Steiffer, Nature 406, 1032 (2000)CrossRef
4.M.L. Green, E.P. Gusev, R. Degreave, E.L. Garfunkel, J. Appl. Phys. 90, 2057 (2001)ADS CrossRef
5.J. Robertson, Solid State Electron. 49, 283 (2005)ADS CrossRef
6.K. Xiong, J. Robertson, M.C. Gibson, S.J. Clark, Appl. Phys. Lett. 87, 183505 (2005)ADS CrossRef
7.K. Xiong, J. Robertson, S.J. Clark, Appl. Phys. Lett. 89, 022907 (2006)ADS CrossRef
8.N. Shi, R. Ramprasad, J. Comput. Aided Mater. Des. 10820, 133 (2006)
9.C.M. Perkins, B.B. Triplett, P.C. Mclntyre, K.C. Saraswat, S. Haukka, M. Touminen, Appl. Phys. Lett. 78, 2357 (2001)ADS CrossRef
10.H.S. Chang, H.D. Yang, H. Hwang, H.M. Cho, H.J. Lee, D.W. Moon, J. Vac. Sci. Technol. B 20, 1836 (2002)CrossRef
11.R. Resta, A. Baldereschi, Phys. Rev. B 23, 6615 (1981)ADS CrossRef
12.F. Giustino, A. Pasquarello, Phys. Rev. B 71, 144104 (2005)ADS CrossRef
13.N. Shi, R. Ramprasad, Phys. Rev. B 74, 045318 (2006)ADS CrossRef
14.Sadakazu Wakui, Jun Nakamura, Akiko Natori, J. Vac. Sci. Technol. B 26, 1579 (2008)CrossRef
15.F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian, A. Madhukar, Phys. Rev. Lett. 43, 1683 (1979)ADS CrossRef
16.A. Ishizaka, S. Iwata, Appl. Phys. Lett. 36, 71 (1980)ADS CrossRef
17.M.T. Sieger, D.A. Luh, T. Miller, T.-C. Chiang, Phys. Rev. Lett. 77, 2758 (1996)ADS CrossRef
18.D.E. Aspnes, J.B. Theeten, J. Electrochem. Soc. 127(6), 1359 (1980)CrossRef
19.A. Ourmazd, D.W. Taylor, J.A. Rentschler, J. Bevk, Phys. Rev. Lett. 59(2), 213 (1987)ADS CrossRef
20.E. Degoli, S. Ossicini, Surf. Sci. 470, 32 (2000)ADS CrossRef
21.P. Umari, A. Pasquarello, Phys. Rev. Lett. 89(15), 157602 (2001)ADS CrossRef
22.F. Corsetti, A.A. Mostofi, J. Phys. Condens. Matter 26, 055002 (2014)CrossRef
23.A. Stesmans, V.V. Afanas’ev, J. Phys. Condens. Matter 10, L19 (1998)ADS CrossRef
24.M.D. Segall, J. Philip, D. Lindan, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark, M.C. Payne, J. Phys. Condens. Matter 14, 2717 (2002)ADS CrossRef
25.S.J. Clark, M.D. Segall, C.J. Pickard, P.J. Hasnip, M.I.J. Probert, K. Refson, M.C. Payne, Z. Krist. 220, 567 (2005)
26.P.W. Peacock, K. Xiong, K. Tse, J. Robertson, Phys. Rev. B 73, 075328 (2006)ADS CrossRef
27.C.J.F. Boetcher, J. Electrochem. Soc. 121, 211C (1974)CrossRef
28.C.M. Herzinger, B. Johs, W.A. McGahan, J.A. Woollam, W. Paulson, J. Appl. Phys. 83, 3323 (1998)ADS CrossRef
29.E.D. Palik, Handbook of Optical Constants of Solids (Academic Press, New York, 1985), pp. 547–566 - 作者单位：Li-mei Rong (1)
Zhi-jun Meng (1)
Cong Xiao (1)
Long Zhou (1)
Long-huan Du (1)
Kui Liu (1)
Jiang-feng Du (1)
1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Condensed Matter
Optical and Electronic Materials
Nanotechnology
Characterization and Evaluation Materials
Surfaces and Interfaces and Thin Films
Operating Procedures and Materials Treatment - 出版者：Springer Berlin / Heidelberg
- ISSN：1432-0630
文摘
We present a new method to investigate the local optical dielectric permittivity using layered capacitors. The method has been applied to study the optical dielectric constants of Si/SiO2 structures without defects, with dangling bonds, and with dangling bonds passivated by H. For each of the three structures, models composed of 5, 7, and 12 Si layers were studied, and the effect of the Si layer thickness was assessed. The different local optical dielectric constants in the adjacent Si interface region were obtained for the nine models, and the effect of the Si layer thickness, the bond lengths, and the oxidation states of Si at the interface were analyzed. The results showed that the local optical dielectric constant of the structure with dangling bonds in the region adjacent to the Si interface was larger than that of the structure with no defects; and the effect of the interface defect Si+1 on the dielectric constant is stronger than that of the Si layer thickness, and effect scope of Si+1 reached approximate 7 Å in silicon region.