Effects of electrode on resistance switching properties of ZnMn₂O₄ films deposited by magnetron sputtering

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• 作者：Hua Wang 王华 ; Zhida Li ; Jiwen Xu ; Yupei Zhang…
• 关键词：Key wordsZnMn2O4 ; resistance switching behavior ; electrode ; magnetron sputtering
• 刊名：Journal of Wuhan University of Technology-Mater. Sci. Ed.
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：31
• 期：6
• 页码：1230-1234
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Materials Science, general;
• 出版者：Wuhan University of Technology
• ISSN：1993-0437
• 卷排序：31

文摘

ZnMn₂O₄ films for resistance random access memory (RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn₂O₄ films were investigated. The ZnMn₂O₄ films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching (BRS) behavior dominated by the space-charge-limited conduction (SCLC) mechanism in the high resistance state (HRS) and the filament conduction mechanism in the low resistance state (LRS), but the ZnMn₂O₄ films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel (P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn₂O₄/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest R_HRS/R_LRS ratio of 104 and the lowest V_ON and V_OFF of 3.0 V have been observed in Ag/ZnMn₂O₄/Pt device. Though the Ag/ZnMn₂O₄/n-Si device also possesses the highest R_HRS/R_LRS ratio of 104, but the highest values of V_ON,V_OFF, R_HRS and R_LRS, as well as the poor endurance and retention characteristics.