Characterization of quaternary AlInGaN films obtained by incorporating Al into InGaN film with the RF reactive magnetron sputtering technology
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- 作者：Kaifan Lin ; Dong-Hau Kuo
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：28
- 期：1
- 页码：43-51
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
- 出版者：Springer US
- ISSN：1573-482X
- 卷排序：28
文摘
Al incorporation into the InGaN films has been successfully attained from the cermet targets under the working temperature of 200 °C and output power of 120 W by the RF sputtering technique. We used energy dispersive spectroscopy to analyze the compositions of the AlxInyGa1−x−yN, and X-ray diffractometry and atomic force microscopy had been taken to obtain the crystal structure and growth characteristics of the AlInGaN films. Composition-affected electrical properties of the films had been discussed by the Hall measurement, which also identified the incorporation of Al into the InGaN film in this work. A simple n-AlInGaN/p-Si diode is designed to illustrate the potential application of the sputtered AlInGaN in an electrical device.