Structural and thermoelectric properties of Al-doped ZnO thin films grown by chemical and physical methods

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• 作者：Thong Quang Trinh ; Tinh Trong Nguyen…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：1
• 页码：236-240
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

Aluminum doped zinc oxide (AZO) thin films have become technologically important materials due to their application potential for thermoelectric devices. In this paper, AZO thin films are deposited on the glass substrates using the solution derived by sol–gel route for dip-coating cycles and the radio-frequency sputtering process. The crystalline structure of two types of AZO films is characterized by X-ray diffraction exhibiting the typical hexagonal wurzite structure of ZnO. The rough surface of the heat treated films are observed by the SEM image. The average grain size of obtained films is evaluated based on these investigations showing they are consistent with each other. The sheet resistivity and Seebeck coefficient are measured between room temperature and 400 °C and used to determine the electrical conductivity and power factor of all films. The obtained results provide the advantages and disadvantages of the prepared films by each method for aiming at thermoelectrical applications.