Computational Modelling on Heat Transfer Study of Molten Silicon During Multi-crystalline Silicon Growth Process for PV Applications

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• 作者：M. Srinivasan ; P. Ramasamy
• 关键词：Silicon ; Heat transfer ; Fluid flow ; Simulation ; Dimensionless numbers ; Solar cell
• 刊名：SILICON
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：9
• 期：1
• 页码：7-16
• 全文大小：2,577 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Inorganic Chemistry
  Materials Science
  Organic Chemistry
  Polymer Sciences
  Biomedical Engineering
  Nanotechnology
  
• 出版者：Springer Netherlands
• ISSN：1876-9918
• 卷排序：9

文摘

Multi-crystalline silicon is an important material with advantages of low-production cost and high conversion efficiency for photovoltaic solar cells. Directional solidifi cation has become the main technique for producing mc-Si ingots for solar cell applications. The study is performed in the framework of the incompressible Navier-Stokes equation in the Boussinesq approximation with convection-conduction equations. The computations are carried out in a two dimensional (2D) axisymmetric model by the finite- element method. The influence of the Reynolds numbers, total heat flux and velocity streamline pattern on the silicon melt was simulated and analyzed for various Rayleigh numbers between 10 to 10 6 with the help of a numerical technique. The following key findings are presented in this paper. The velocity field value is increased above 0.02(m/s), heat flux value is increased to 10 4(W/m 2), when the Rayleigh number is increased above 1000. Reynolds numbers are also studied in five parallel horizontal cross-sections of the melt silicon region for various Prandtl numbers at a critical Rayleigh number of 1000. Reynolds numbers are varied between 100 and 10 5 for the Rayleigh numbers between 10 to 10 6. Meanwhile, the melt has high fluctuation when the Prandtl number is increased above 0.01. The flow is converted from laminar to turbulence at a critical Rayleigh number 1000 and Prandtl number 0.01. These results provide important information for controlling the melt fluctuations during the solidification process which are used to increase the average grain size in growing silicon multicrystals and reduce the dislocation density.