Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

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• 作者：M. Dyksik ; M. Motyka ; R. Weih ; S. Höfling ; M. Kamp…
• 关键词：Fourier ; transform infrared spectroscopy ; Type II quantum wells ; Photoluminescence quenching ; Carrier transfer ; Localized states
• 刊名：Optical and Quantum Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：49
• 期：2
• 全文大小：794KB
• 刊物主题：Optics, Lasers, Photonics, Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X
• 卷排序：49

文摘

Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170–200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13–15 meV.