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作者单位:S. V. Burdyukh (1) G. B. Stefanovich (1) A. L. Pergament (1) O. Ya. Berezina (1) N. A. Avdeev (1) A. B. Cheremisin (1)
1. Petrozavodsk State University, Petrozavodsk, 185910, Russia
刊物类别:Physics and Astronomy
刊物主题:Physics Mechanics, Fluids and Thermodynamics Russian Library of Science
出版者:MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
ISSN:1090-6533
文摘
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO2 films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.