Modification of the properties of vanadium dioxide by plasma-immersion ion implantation
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  • 作者:S. V. Burdyukh ; G. B. Stefanovich ; A. L. Pergament…
  • 刊名:Technical Physics Letters
  • 出版年:2016
  • 出版时间:January 2016
  • 年:2016
  • 卷:42
  • 期:1
  • 页码:32-35
  • 全文大小:376 KB
  • 参考文献:1.A. L. Pergament, G. B. Stefanovich, and A. A. Velichko, J. Sel. Top. Nano Electron. Comput. 1 (1), 24 (2013).CrossRef
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  • 作者单位:S. V. Burdyukh (1)
    G. B. Stefanovich (1)
    A. L. Pergament (1)
    O. Ya. Berezina (1)
    N. A. Avdeev (1)
    A. B. Cheremisin (1)

    1. Petrozavodsk State University, Petrozavodsk, 185910, Russia
  • 刊物类别:Physics and Astronomy
  • 刊物主题:Physics
    Mechanics, Fluids and Thermodynamics
    Russian Library of Science
  • 出版者:MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
  • ISSN:1090-6533
文摘
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO2 films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.

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