Crystal Structure and Morphology of Nanocrystalline TiN Thin Films

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• 作者：C. V. Ramana (12) rvchintalapalle@utep.edu
  S. White (1)
  N. Esparza (12)
  V. Rangel (12)
  A. L. Campbell (3)
• 关键词：TiN films &#8211 ; reactive sputtering &#8211 ; crystal structure &#8211 ; texturing &#8211 ; lattice constant morphology
• 刊名：Journal of Electronic Materials
• 出版年：2012
• 出版时间：November 2012
• 年：2012
• 卷：41
• 期：11
• 页码：3139-3144
• 全文大小：464.5 KB
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• 作者单位：1. Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968, USA2. Department of Materials Science and Engineering, University of Texas at El Paso, El Paso, TX 79968, USA3. Materials and Manufacturing Directorate (RX), Wright-Patterson Air Force Base (WPAFB), Wright-Patterson Air Force Base, OH 45433, USA
• ISSN：1543-186X

文摘

Titanium nitride (TiN) thin films were grown employing radiofrequency (RF) magnetron sputtering under varying nitrogen gas flow rates. Characterization of the grown materials was done by grazing-incidence x-ray diffraction and scanning electron microscopy. The results indicate that the crystal structure and texture of the grown TiN layers are dependent on the ratio of nitrogen to argon in the reactive gas mixture during deposition. TiN coatings initially showed (111) preferred orientation, then mixed (111) and (002) texturing, followed by completely (002) texturing with increasing nitrogen content. The analyses indicate that the nitrogen incorporation into the layers and the associated chemistry determine the texturing and lattice parameters.