Improved the light extraction efficiency of GaN vertical light-emitting diodes using 3D sphere-like arrays

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• 作者：Xinlian Chen ; Kang Li ; Fanmin Kong ; Jing Wang ; Li Zhang
• 关键词：Light emitting diodes (LEDs) ; Light extraction efficiency (LEE) ; Monte Carlo ray tracing method (MCRTM) ; Sphere ; like arrays
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：47
• 期：8
• 页码：2957-2968
• 全文大小：969 KB
• 参考文献：Bentoumi, G., Deneuville, A., Beaumont, B., Gibart, P.: Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN. Mater. Sci. Eng. B 50(1鈥?), 142鈥?47 (1997)CrossRef
  Byeon, K.-J., Cho, J.-Y., Song, J.O., Lee, S.Y., Lee, H.: High
  ightness vertical GaN-based light-emitting diodes with hexagonally close-packed micrometer array structures. Photonics J. IEEE 5(6), 8200708 (2013)CrossRef
  Chen, X., Kong, F., Li, K., Ding, Q., Zhang, M., Li, W.: Study of light extraction efficiency of flip-chip GaN-based LEDs with different periodic arrays. Opt. Commun. 314, 90鈥?6 (2014)CrossRef ADS
  Chiu, C.-H., Hsu, L.-H., Lee, C.-Y., Lin, C.-C., Lin, B.-W., Tu, S.-J., et al.: Light extraction enhancement of GaN-based light-emitting diodes using crown-shaped patterned sapphire substrates. Photonics Technol. Lett. IEEE 24(14), 1212鈥?214 (2012)CrossRef ADS
  Chu, C.-F., Chen, C.-C., Liu, W.-H., Chu, J.-Y., Fan, F.-H., Cheng, H.-C., et al.: High brightness GaN vertical light-emitting diodes on metal alloy for general lighting application. Proc. IEEE 98(7), 1197鈥?207 (2010)
  Chu, C.-F., Lai, F.-I., Chu, J.-T., Yu, C.-C., Lin, C.-F., Kuo, H.-C., et al.: Study of GaN light-emitting diodes fabricated by laser lift-off technique. J. Appl. Phys. 95(8), 3916鈥?922 (2004)CrossRef ADS
  Ee, Y.-K., Kumnorkaew, P., Arif, R.A., Tong, H., Gilchrist, J.F., Tansu, N.: Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Opt. Express 17(16), 13747鈥?3757 (2009a)CrossRef ADS
  Ee, Y.-K., Kumnorkaew, P., Arif, R.A., Tong, H., Zhao, H., Gilchrist, J.F., et al.: Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses. Sel. Top. Quantum Electron. IEEE J. 15(4), 1218鈥?225 (2009b)CrossRef
  Fujii, T., Gao, Y., Sharma, R., Hu, E.L., DenBaars, S.P., Nakamura, S.: Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl. Phys. Lett. 84(6), 855鈥?57 (2004)CrossRef ADS
  Gao, H., Yan, F., Zhang, Y., Li, J., Zeng, Y., Wang, G.: Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro-and nanoscale. J. Appl. Phys. 103(1), 014314鈥?14315 (2008)CrossRef ADS
  Lee, T.-X., Gao, K., Chien, W.-T., Sun, C.-C.: Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate. Opt. Express 15(11), 6670鈥?676 (2007)CrossRef ADS
  Li, W., Li, K., Kong, F.-M., Yue, Q.-Y., Chen, X.-L., Yu, X.-J.: Study of light extraction efficiency of GaN-based light emitting diodes by using top micro/nanorod hybrid arrays. Opt. Quantum Electron. 46(11), 1413鈥?423 (2014)
  Li, X.-H., Song, R., Ee, Y.-K., Kumnorkaew, P., Gilchrist, J.F., Tansu, N.: Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios. Photonics J. IEEE 3(3), 489鈥?99 (2011)CrossRef
  Liu, Z., Wang, K., Luo, X., Liu, S.: Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing. Opt. Express 18(9), 9398鈥?412 (2010)MathSciNet CrossRef ADS
  Matioli, E., Weisbuch, C.: Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs. J. Phys. D: Appl. Phys. 43(35), 354005 (2010)CrossRef
  Narukawa, Y., Ichikawa, M., Sanga, D., Sano, M., Mukai, T.: White light emitting diodes with super-high luminous efficacy. J. Phys. D 43, 354002 (2010)CrossRef
  Pan, J.-W., Wang, C.-S.: Light extraction efficiency of GaN-based LED with pyramid texture by using ray path analysis. Opt. Express 20(105), A630鈥揂640 (2012)CrossRef ADS
  Ryu, H.-Y., Shim, J.-I.: Structural parameter dependence of light extraction efficiency in photonic crystal InGaN vertical light-emitting diode structures. IEEE J. Quantum Electron 46(5), 714鈥?20 (2010)
  Schubert, E.F., Gessmann, T., Kim, J.K.: Light emitting diodes. Cambridge University Press, New York (2005)
  Shchekin, O.B., Epler, J.E., Trottier, T.A., Margalith, T., Steigerwald, D.A., Holcomb, M.O., et al.: High performance thin-film flip-chip InGaN鈥揋aN light-emitting diodes. Appl. Phys. Lett. 89(7), 071109 (2006)
  Song, J.L.: Analysis of light-emitting diodes by Monte Carlo photon simulation. Appl. Opt. 40(9), 1427鈥?437 (2001)CrossRef
  Song, J.L.: Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes. Opt. Eng. 45(1), 14601-1-14 (2006)
  Tan, S.-T., Sun, W.-X., Demir, H.-V., DenBaars, S.-P.: Advances in the LED materials and architectures for energy-saving solid-state lighting toward 鈥渓ighting revolution鈥? IEEE Photonics J. 4(2), 613鈥?19 (2012)CrossRef
  Tsai, M.-A., Yu, P., Chao, C., Chiu, C., Kuo, H., Lin, S., et al.: Efficiency enhancement and beam shaping of GaN鈥揑nGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays. Photonics Technol Lett IEEE 21(4), 257鈥?59 (2009)CrossRef ADS
  Wang, Y.-T., Chou, Y., Chen, L.-Y., Yin, Y.-F., Lin, Y.-C., Huang, J.-J.: On the radiation profiles and light extraction of vertical LEDs with hybrid nanorod and truncated microdome surface textures. IEEE J. Quantum Electron. 49(1), 11鈥?6 (2013)
  Wei, T., Wu, K., Chen, Y., Yu, J., Yan, Q., Zhang, Y., et al.: Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays. Electron Device Lett. IEEE 33(6), 857鈥?59 (2012)CrossRef ADS
  Wierer, J.J., David, A., Megens, M.M.: III-Nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat. Photonics 3(3), 163鈥?69 (2009)CrossRef ADS
  Xiao-Hang, L., Renbo, S., Yik-Khoon, E., Kumnorkaew, P., Gilchrist, J.F., Tansu, N.: Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios. IEEE Photonics J. 3(3), 489鈥?99 (2011)CrossRef
  Ye, B.U., Kim, B.J., Song, Y.H., Son, J.H., Kim, M.H., Lee, J.L., et al.: Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection. Adv. Funct. Mater. 22(3), 632鈥?39 (2012)CrossRef
  Yin, H.-X., Zhu, C.-R., Shen, Y., Yang, H.-F., Liu, Z., Gu, C.-Z., Liu, B.-L., Xu, X.-G.: Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure. Appl. Phys. Lett. 104, 061113 (2014)CrossRef ADS
  Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J., Jimbo, T.: Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78鈥?.77聽eV) by spectroscopic ellipsometry and the optical transmission method. Appl. Phys. Lett. 70(24), 3209鈥?211 (1997)CrossRef ADS
  Zhao, P., Zhao, H.: Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes. Opt. Express 20(105), A765鈥揂776 (2012)CrossRef ADS
  Zhu, P., Liu, G., Zhang, J., Tansu, N.: FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays. Disp. Technol. J. 9(5), 317鈥?23 (2013)CrossRef
  
• 作者单位：Xinlian Chen (1)
  Kang Li (2)
  Fanmin Kong (2)
  Jing Wang (1)
  Li Zhang (1)
  
  1. School of Physics and Technology, University of Jinan, Jinan, 250022, Shandong, People鈥檚 Republic of China
  2. School of Information Science and Engineering, Shandong University, Jinan, 250100, Shandong, People鈥檚 Republic of China
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The formation of the micro-patterned structure in the vertical light-emitting diodes (VLEDs) is a practicable solution for light extraction enhancement. In this study, the Monte Carlo ray tracing method was used to investigate the effects of the absorption coefficient of GaN material and structural parameters of 3D sphere-like arrays on the light extraction efficiency (LEE). The simulation results showed that a maximum LEE change of about 17 % can be achieved when the absorption coefficient (伪) varies between 0 and to 10 mm鈭?. The 3D sphere-like arrays can effectively improve the LEE of GaN VLEDs. The LEE decreases as the period of the 3D sphere-like arrays increases. The LEE for close-packed convex hemisphere arrays with R = 3 渭m and 伪 = 0/mm鈭? is about 4.5 times greater than that for planar VLEDs. For the close-packed convex hemisphere arrays, the LEE of the GaN VLEDs is inversely correlated with their diameter. However, for the close-packed concave hemisphere arrays, an opposite trend was observed. In addition, for the VLEDs with the concave sphere-like arrays, an increase in array height leads to an improved LEE. These results provide theoretical guideline for the design of the GaN VLEDs with high LEE. Keywords Light emitting diodes (LEDs) Light extraction efficiency (LEE) Monte Carlo ray tracing method (MCRTM) Sphere-like arrays