Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing

详细信息    查看全文

• 作者：M. Yamaguchi ; T. Kawazoe ; T. Yatsui ; M. Ohtsu
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：121
• 期：4
• 页码：1389-1394
• 全文大小：1,285 KB
• 参考文献：1.W. Wilson, P. Szajowski, L. Brus, Science 262, 1242 (1993)CrossRef ADS
  2.S. Cloutier, P. Kossyrev, J. Xu, Nat. Mater. 4, 887 (2005)CrossRef ADS
  3.F. Maier-Flaig, J. Rinck, M. Stephan, T. Bocksrocker, M. Bruns, C. Kubel, A. Powell, G. Ozin, U. Lemmer, Nano Lett. 13, 475 (2013)CrossRef ADS
  4.L. Canham, Appl. Phys. Lett. 57, 1046 (1990)CrossRef ADS
  5.A. Cullis, L. Canham, Nature 353, 335 (1991)CrossRef ADS
  6.J. Park, L. Gu, G. von Maltzahn, E. Ruoslahti, S. Bhatia, M. Sailor, Nat. Mater. 8, 331 (2009)CrossRef ADS
  7.P. Schmidt, R. Berndt, M. Vexler, Phys. Rev. Lett. 99, 246103 (2007)CrossRef ADS
  8.R. Newman, Phys. Rev. 100, 700 (1955)CrossRef ADS
  9.C. Cho, C. Aspetti, J. Park, R. Agarwal, Nat. Photon. 7, 285 (2013)CrossRef ADS
  10.T. Kawazoe, M. Mueed, M. Ohtsu, Appl. Phys. B 104, 747 (2011)CrossRef ADS
  11.N. Wada, T. Kawazoe, M. Ohtsu, Appl. Phys. B 108, 25 (2012)CrossRef ADS
  12.M. Yamaguchi, T. Kawazoe, M. Ohtsu, Appl. Phys. A 115, 119 (2014)CrossRef ADS
  13.M. Tran, T. Kawazoe, M. Ohtsu, Appl. Phys. A 115, 105 (2013)CrossRef ADS
  14.M. Ohtsu, Dressed Photons: Concepts of Light–Matter Fusion Technology (Springer, Berlin, 2013)
  15.Y. Tanaka, K. Kobayashi, J. Microsc. 229, 228 (2008)MathSciNet CrossRef
  16.T. Kawazoe, K. Kobayashi, S. Takubo, M. Ohtsu, J. Chem. Phys. 122, 024715 (2005)CrossRef ADS
  17.Y. Tanaka, K. Kobayashi, Phys. E 40, 297 (2007)CrossRef
  18.M. Green, M. Keevers, Progr. Photovoltaics Res. Appl. 3, 189 (1995)CrossRef
  19.P. Giannozzi, S. de Gironcoli, Phys. Rev. B 43, 7231 (1991)CrossRef ADS
  20.K. Sieh, P. Smith, Phys. Status Solidi (b) 129, 259 (1985)CrossRef ADS
  
• 作者单位：M. Yamaguchi (1)
  T. Kawazoe (1) (3)
  T. Yatsui (1) (2)
  M. Ohtsu (1) (2) (3)
  
  1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
  3. Specified Nonprofit Corporation Nanophotonics Engineering Organization, 1-20-10, Sekiguchi, Bunkyo-ku, Tokyo, 112-0014, Japan
  2. International Center for Nano Electron and Photon Technology, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

We developed a visible silicon light-emitting diode (Si-LED) with a lateral p–n homojunction using dressed-photon–phonon (DPP)-assisted annealing. The lateral p–n homojunction was fabricated in order to decrease the absorption loss inherent in light emission with a photon energy higher than the band-gap energy of the material. The fabricated Si-LED emitted light in the entire visible range, including the three primary colors. The light extraction efficiency of the Si-LED was estimated to be 7.8 times higher than that of a conventional LED structure with a vertical p–n homojunction. Owing to the efficient light extraction, we clearly observed two novel features in the electroluminescence (EL) spectrum: a nonlinear increase in the EL intensity with the injected forward current, and an emission peak at 2.7 eV, at which there is no singular point in the electronic structure. From these features, we concluded that the EL from the Si-LED originated from the phonon-assisted radiative recombination of carriers with much higher energy than that of the bottom of the conduction band, via DPPs.