Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc

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• 作者：Suat Pat ; Volkan Şenay ; Soner Özen ; Şadan Korkmaz
• 关键词：Mo doping ; Ge doping ; hybrid properties ; surface characteristics ; surface free energy
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：45
• 期：1
• 页码：255-261
• 全文大小：953 KB
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• 作者单位：Suat Pat (1)
  Volkan Şenay (2)
  Soner Özen (1)
  Şadan Korkmaz (1)
  
  1. Physics Department, Eskisehir Osmangazi University, Eskisehir, Turkey
  2. Physics Department, Bayburt University, Bayburt, Turkey
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Mo-doped and undoped GeGaAs layers have been deposited by the thermionic vacuum arc (TVA) method, an alternative, fast plasma deposition technique. The thicknesses of the deposited layers were identical. The surface, mechanical, and optical properties of the deposited layers were studied to determine the influence of Mo doping on GeGaAs. The transparency of GeGaAs was shifted towards the near-infrared region by Mo doping. Bandgap values shifted by approximately 0.3 eV. In other words, the bandgap value of Mo-doped GeGaAs was nearly equal to that of GaAs materials. The average roughness and grain size of the Mo-doped material were smaller than for the GeGaAs layer. The particle distributions of the Mo-doped and undoped GeGaAs were almost perfect Gaussians. However, the mean height of the Mo-doped GeGaAs grains was six times that for undoped GeGaAs. The surface was homogeneous. The Mo-doped layer showed greater absorbance than the GeGaAs material. The produced Mo-doped sample showed hybrid properties.