Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures

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• 作者：ZhiTian Liu (14875) (24875)
  SuJun Hu (14875)
  LinHua Zhang (24875)
  JunWu Chen (14875)
  JunBiao Peng (14875)
  Yong Cao (14875)
  
• 关键词：silole ; containing polymers ; N ; N ; dimethylaminobenzene ; polyfluorene ; electroluminescence
• 刊名：SCIENCE CHINA Chemistry
• 出版年：2013
• 出版时间：August 2013
• 年：2013
• 卷：56
• 期：8
• 页码：1129-1136
• 全文大小：605KB
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• 作者单位：ZhiTian Liu (14875) (24875)
  SuJun Hu (14875)
  LinHua Zhang (24875)
  JunWu Chen (14875)
  JunBiao Peng (14875)
  Yong Cao (14875)
  
  14875. State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, Guangzhou, 510640, China
  24875. School of Materials Science & Engineering, Wuhan Institute of Technology, Wuhan, 430073, China
  

文摘

A new silole monomer with two 4-(N,N-dimethylamino)phenyl substitutions on silicon atom as designed and synthesized. Three copolymers PF-N-HPS1, PF-N-HPS10 and PF-N-HPS20 were then obtained by copolymerizations of 2,7-fluorene derivatives with the silole monomer at feed ratios of 1%, 10%, and 20%. Their UV-vis absorption, electrochemical, photoluminescent, and electroluminescent (EL) properties were investigated. PF-N-HPS possessed HOMO levels of ?.25–?5.58 eV, and showed green emissions. Using PF-N-HPS as the emissive layer, three different polymer light-emitting diodes were fabricated as device A with ITO/PEDOT/PF-N-HPS/Al, device B with ITO/PEDOT/PF-N-HPS/Ba/Al, and device C with ITO/PEDOT/PF-N-HPS/TPBI/Ba/Al. For the device A, PF-N-HPS only showed very low EL efficiency of 0.06-.33 cd/A, indicating that the Al cathode could not inject electron efficiently to the emissive polymers containing the 4-(N,N-dimethylamino)phenyl groups. For the device B, low work function Ba supplied better electron injections, and the EL efficiency could be improved to 0.85-.44 cd/A. TPBI with a deep HOMO level of ?.2 eV could enhance electron transport and hole blocking. Thus modified recombinations and largely elevated EL efficiency of 4.56-.96 cd/A were achieved for the device C. The separation of the emissive layer and metal cathode with the TPBI layer may also suppress exciton quenching at the cathode interface.