Photoluminescence properties of Pt-functionalized ZnSe nanowires

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• 作者：Soohyun Kim ; Sunghoon Park ; Chongmu Lee
• 关键词：ZnSe nanowires ; Pt functionalization ; Annealing ; Surface plasmon resonance ; Photoluminescence
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：66
• 期：7
• 页码：1082-1086
• 全文大小：682 KB
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• 作者单位：Soohyun Kim (1)
  Sunghoon Park (1)
  Chongmu Lee (1)
  
  1. Department of Materials Science and Engineering, Inha University, Incheon, 402-751, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

ZnSe nanowires were synthesized by using the thermal evaporation of ZnSe powder, and the effects of Pt functionalization and thermal annealing on the photoluminescence (PL) properties of the nanostructures were examined. PL spectroscopy showed that the intensity of the near-band-edge (NBE) emission of the ZnSe nanowires was enhanced considerably by Pt coating and annealing in a H₂ atmosphere. The intensity ratio of NBE emission to deep-level emission, I _NBE /I _DL , of Pt-coated ZnSe nanowires after annealing in a H₂ atmosphere was ?1 times higher than that of the pristine (unannealed, uncoated) ZnSe nanowires. The increase in I _NBE /I _DL might be due to a combination of carrier transfer from defect levels to the Fermi level of the Pt nanoparticles, surface plasmon resonance in the Pt nanoparticles and hydrogen passivation of deep-level defects.