Optical second-harmonic generation in few-layer MoSe2

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• 作者：Dong Hak Kim (1)
  D. Lim (1)
  
  1. Department of Applied Physics ; College of Applied Science ; Kyung Hee University ; Yongin ; 449-701 ; Korea
  
• 关键词：Second harmonic generation ; MoSe2 ; Chemical doping ; Symmetry ; Circular polarization
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：66
• 期：5
• 页码：816-820
• 全文大小：1,329 KB
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• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

We show that optical second-harmonic generation (SHG) from few-layer MoSe2 can sensitively probe external symmetry perturbations such as chemical doping. The SHGs from few-layer MoSe2 are enhanced after AuCl3 chemical doping, especially more so for the thicker MoSe2 samples. This enhancement is due to an electric-field-induced SHG contribution originating from the charge transfer between the adsorbed chemical dopants and the MoSe2. By using this sensitivity, we demonstrate an in-situ monitoring of the thermal desorption of adsorbed chemical dopants. Moreover, we find that the SHG generated from monolayer MoSe2 is counter-circularly polarized for a circularlypolarized fundamental beam due to the three-fold rotational symmetry of MoSe2. Our work shows that SHG can probe not only the symmetry properties of atomically-thin 2D semiconductors, but also the external symmetry perturbations on them.