Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation

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• 作者：I. A. Tambasov (1) (3)
  V. G. Myagkov (1) (3)
  A. A. Ivanenko (1)
  L. E. Bykova (1)
  E. V. Yozhikova (2)
  I. A. Maksimov (3)
  V. V. Ivanov (3)
  
• 刊名：Semiconductors
• 出版年：2014
• 出版时间：February 2014
• 年：2014
• 卷：48
• 期：2
• 页码：207-211
• 全文大小：196 KB
• 作者单位：I. A. Tambasov (1) (3)
  V. G. Myagkov (1) (3)
  A. A. Ivanenko (1)
  L. E. Bykova (1)
  E. V. Yozhikova (2)
  I. A. Maksimov (3)
  V. V. Ivanov (3)
  
  1. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russia
  3. Joint Stock Company “Academician M.F. Reshetnev Information Satellite Systems- Zheleznogorsk, 662972, Russia
  2. Siberian State Aerospace University, Krasnoyarsk, 660037, Russia
  
• ISSN：1090-6479

文摘

Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Ω s? during the first 30 s and 7 Ω s? over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 μm. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s?. It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.