Structural and optical properties of thin In2O3 films produced by autowave oxidation

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• 作者：I. A. Tambasov (1197) (3197)
  V. G. Myagkov (1197)
  A. A. Ivanenko (1197)
  I. V. Nemtsev (1197)
  L. E. Bykova (1197)
  G. N. Bondarenko (2197)
  J. L. Mihlin (1197)
  I. A. Maksimov (2197)
  V. V. Ivanov (3197)
  S. V. Balashov (3197)
  D. S. Karpenko (3197)
  
• 刊名：Semiconductors
• 出版年：2013
• 出版时间：April 2013
• 年：2013
• 卷：47
• 期：4
• 页码：569-573
• 全文大小：482KB
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• 作者单位：I. A. Tambasov (1197) (3197)
  V. G. Myagkov (1197)
  A. A. Ivanenko (1197)
  I. V. Nemtsev (1197)
  L. E. Bykova (1197)
  G. N. Bondarenko (2197)
  J. L. Mihlin (1197)
  I. A. Maksimov (2197)
  V. V. Ivanov (3197)
  S. V. Balashov (3197)
  D. S. Karpenko (3197)
  
  1197. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russia
  3197. Joint Stock Company “Academician M.F. Reshetnev Information Satellite Systems- Zheleznogorsk, 662972, Russia
  2197. Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660049, Russia
  
• ISSN：1090-6479

文摘

Cubic-phase In2O3 films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20-0 nm. The optical and electrical properties are studied for In2O3 films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10? Ω cm.