Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

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• 作者：Mahdiar Ghadiry ; Harith Ahmad ; Alieh Hivechi ; Fatemeh Tavakoli…
• 关键词：Graphene ; Photodiode ; Generation rate ; Field effect transistors ; Breakdown voltage ; Edge effect
• 刊名：Plasmonics
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：11
• 期：2
• 页码：573-577
• 全文大小：1,450 KB
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• 作者单位：Mahdiar Ghadiry (1)
  Harith Ahmad (1)
  Alieh Hivechi (2)
  Fatemeh Tavakoli (3)
  Asrulnizam Abd Manaf (4)
  
  1. Photonic Research Center, University of Malaya, Kuala Lumpur, 50600, Malaysia
  2. Department of Computer Engineering, Faculty of Engineering, Islamic Azad University, Arak Branch, Arak, Iran
  3. Department of Computer Engineering, Faculty of Engineering, Islamic Azad University, Aligoudarz Branch, Aligoudarz, Iran
  4. School of Electrical and Electronics Engineering, Universiti Sains Malaysia, Penang, Malaysia
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Biotechnology
  Nanotechnology
  Biophysics and Biomedical Physics
  Biochemistry
  
• 出版者：Springer US
• ISSN：1557-1963

文摘

Based on the influence of edge effect and channel shape, two new graphene nanoribbon field effect transistors are presented being useful in high-voltage and highly sensitive optical applications. We fabricated and examined our devices under different conditions. It is seen that by choosing the proper channel shape, ionization rate and breakdown voltage could be improved compared to a normal rectangular device. We report nearly 11 and 19 % improvements in breakdown voltage and ionization rate of graphene nanoribbon field effect transistors (GNRFET), respectively.