Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

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• 作者：Aurimas ?er?kus ; Jurgis Kundrotas ; Algirdas Su?ied?lis…
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2015
• 出版时间：September 2015
• 年：2015
• 卷：120
• 期：3
• 页码：1133-1140
• 全文大小：1,268 KB
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• 作者单位：Aurimas ?er?kus (1) (2)
  Jurgis Kundrotas (1)
  Algirdas Su?ied?lis (1) (2)
  Jonas Gradauskas (1) (2)
  Steponas A?montas (1)
  Eric Johannessen (3)
  Agne Johannessen (3)
  
  1. Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Go?tauto 11, 01108, Vilnius, Lithuania
  2. Vilnius Gediminas Technical University, Saul?tekio al. 11, 10223, Vilnius, Lithuania
  3. Buskerud and Vestfold University College, Raveien 215, 3184, Borre, Norway
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

Vertical MBE- and MOCVD-grown \({n}^{+}/{n}\hbox {-GaAs}/\hbox {Al}_{0.25}\hbox {Ga}_{0.75}\hbox {As}\) structures used for microwave electronics have been studied with continuous wave and time-correlated single photon counting dynamic photoluminescence technique. The photoluminescence spectra and light emission lifetimes are used to explain the recombination mechanisms of the excited carriers. This paper presents results showing the differences in recombination characteristics of \({n}^{+}\hbox {-Al}_{0.25}\hbox {Ga}_{0.75}\hbox {As}\) layers grown using MBE process compared with MOCVD process. One of these differences is that the PL spectrum of the MOCVD-grown layer is shifted towards the forbidden energy gap region, as well as the characteristic recombination time is longer than for the MBE-grown sample. This peculiarity can be attributed to the formation of the localised band tails in the \({n}^{+}\hbox {-Al}_{0.25}\hbox {Ga}_{0.75}\hbox {As}\) MOCVD-grown sample. The proposed analytical model explains the differences in microwave detection properties of the samples grown by MBE and MOCVD processes.