Simulation analysis of combined UV/blue photodetector in CMOS process by technology computer-aided design

详细信息    查看全文

• 作者：Changping Chen (1)
  Xiangliang Jin (1)
  Lizhen Tang (1)
  Hongjiao Yang (1)
  Jun Luo (2)
  
• 关键词：ultraviolet (UV)/blue photodetector ; weak light detection ; complimentary metal ; oxide ; semiconductor (CMOS) ; technology computer ; aided design (TCAD)
• 刊名：Frontiers of Optoelectronics
• 出版年：2014
• 出版时间：March 2014
• 年：2014
• 卷：7
• 期：1
• 页码：69-73
• 全文大小：344 KB
• 参考文献：1. Charbon E. Towards large scale CMOS single-photon detector arrays for lab-on-chip applications. Journal of Physics D, Applied Physics, 2008, 41(9): 094010 CrossRef
  2. Chang Y W, Yu P C, Huang Y T, YANG Y S. A CMOS-compatible optical biosensing system based on visible absorption spectroscopy. In: Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits. Tainan: IEEE, 2007, 1099-102
  3. Pauchard A, Besse P A, Popovic R S. A silicon blue/UV selective stripe-shaped photodiode. Sensors and Actuators A: Physical, 1999, 76(1-): 172-77 CrossRef
  4. Ghazi A, Zimmermann H, Seegebrecht P. CMOS photodiode with enhanced responsivity for the UV/blue spectral range. IEEE Transactions on Electron Devices, 2002, 49(7): 1124-128 CrossRef
  5. Pauchard A, Rochas A, Randjelovic Z, Besse P A, Popovic R S. Ultraviolet avalanche photodiode in CMOS technology. In: Proceedings of Electron Devices Meeting, IEDM-0. San Francisco, CA: IEEE, 2000, 709-12
  6. Marwick M A, Andreou A G. A UV photodetector with internal gain fabricated in silicon on sapphire CMOS. In: Proceedings of Sensors 2007 IEEE. Atlanta, GA: IEEE, 2007, 535-38 CrossRef
  7. Li G K, Feng P, Wu N J. A novel monolithic ultraviolet image sensor based on a standard CMOS process. Journal of Semiconductors, 2011, 32(10): 105008-1-05008-6
  8. Weng WY, Hsueh T J, Chang S S, Wang S B, Hsueh H T, Huang G J. A high-responsivity GaN nanowire UV photodetector. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(4): 996-001 CrossRef
  9. Esmaeili-Rad M R, Papadopoulos N P, Bauza M, Nathan A, Wong W S. Blue-light-sensitive phototransistor for indirect X-ray image sensors. Electron Device Letters, 2012, 33(4): 567-69 CrossRef
  10. Serra N, Giacomini G, Melchiorri M, Piazza A, Piemonte C, Tarolli A, Zorzi N. TCAD simulation of avalanche breakdown voltage in GM-APDs. In: Proceedings of Nuclear Science Symposium Conference Record (NSS/MIC). Knoxville, TN: IEEE, 2010, 253-59
  11. Serra N, Giacomini G, Piazza A, Piemonte C, Tarolli A, Zorzi N. Experimental and TCAD study of breakdown voltage temperature behavior in n +/p SiPMs. IEEE Transactions on Nuclear Science, 2011, 58(3): 1233-240 CrossRef
  12. Xie F, Lu H, Chen D J, Xiu X Q, Zhao H, Zhang R, Zheng Y D. Metal-semiconductor-metal ultraviolet avalanche photodiodes fabricated on bulk GaN substrate. Electron Device Letters, 2011, 32(9): 1260-262 CrossRef
  13. Jacob B, Klemenc M, Petit C, Witzig A, Fichtner W. TCAD simulation of photodetector spectral response. In: Proceedings of IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices. Tokyo: IEEE, 2003, 19-0
  14. Schanz M, Brockherde W, Hauschild R, Hosticka B J, Teuner A. CMOS photosensor arrays with on-chip signal processing. In: Proceedings of European Solid State Circuits Conference. Southampton UK: IEEE, 1997, 236-39
  
• 作者单位：Changping Chen (1)
  Xiangliang Jin (1)
  Lizhen Tang (1)
  Hongjiao Yang (1)
  Jun Luo (2)
  
  1. Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, 411105, China
  2. Department of Precision Mechanical Engineering, Shanghai University, Shanghai, 200444, China
  
• ISSN：2095-2767

文摘

A composite ultraviolet (UV)/blue photodetector structure has been proposed, which is composed of P-type silicon substrate, Pwell, Nwell and N-channel metaloxide-semiconductor field-effect transistor (NMOSFET) realized in the Pwell. In this photodetector, lateral ringshaped Pwell-Nwell junction was used to separate the photogenerated carriers, and non-equilibrium excess hole was injected to the Pwell bulk for changing the bulk potential and shifting the NMOSFET’s threshold voltage as well as the output drain current. By technology computer-aided design (TCAD) device, simulation and analysis of this proposed photodetector were carried out. Simulation results show that the combined photodetector has enhanced responsivity to UV/blue spectrum. Moreover, it exhibits very high sensitivity to weak and especially ultral-weak optical light. A sensitivity of 7000 A/W was obtained when an incident optical power of 0.01 μW was illuminated to the photodetector, which is 35000 times higher than the responsivity of a conventional silicon-based UV photodiode (usually is about 0.2 A/W). As a result, this proposed combined photodetector has great potential values for UV applications.