Role of annealing temperature in the oxide charge distribution in high- \(\kappa \) -based MOS devices: simulation and experiment

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• 作者：Debaleen Biswas ; Ayan Chakraborty…
• 刊名：Journal of Computational Electronics
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：15
• 期：3
• 页码：795-800
• 全文大小：1,151 KB
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137
• 卷排序：15

文摘

The effect of rapid thermal annealing on the oxide charge distribution of Al/HfO\(_2\)/SiO\(_2\)/Si metal–oxide–semiconductor structures are studied using technology computer-aided design (TCAD) simulations and experiments. The simulated electrical characteristics are compared with experimentally obtained data. The interface traps are found to be nonuniform in nature and laterally distributed following a Gaussian profile. The distribution of interface trap charges arises because of spatial electric field variation in the oxide film upon gate bias application. The interface trap density is found to decrease with increase in annealing temperature. It is further observed that, at higher annealing temperature, the fixed oxide charge density increases due to interfacial Hf silicate formation.KeywordsHigh-\(\kappa \) dielectricMOS deviceTrapped charge distributionTCAD simulation