Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs

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• 作者：Subhrasmita Panda ; Sidhartha Dash…
• 关键词：SOI TFET ; Workfunction ; modulated gate ; Subthreshold slope ; Drain current
• 刊名：Journal of Computational Electronics
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：15
• 期：4
• 页码：1326-1333
• 全文大小：3,364 KB
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137
• 卷排序：15

文摘

An analytical model for the silicon-on-insulator (SOI) tunnel field-effect transistor (FET) with linearly graded workfunction-modulated gate is proposed to improve device performance through subthreshold slope (SS) optimization. The surface potential of the suggested model is analyzed using the two-dimensional (2-D) Poisson equation with imposed channel boundary conditions. Other electrical parameters such as the electric field, drain current, transconductance, and SS are evaluated to examine the performance of the model. Moreover, the performance in terms of the SS and \(I_{60}\) values for the proposed model with downscaling of gate oxide thickness and silicon body thickness are also investigated and the results compared with results for a conventional tunnel FET (TFET) model. The present model exhibits significant reduction in subthreshold slope (\(\sim 14\,\hbox {mV/decade}\)) and improvement in \(I_{60} \) performance. The accuracy of the model is verified against 2-D technology computer-aided design (TCAD) model simulations.