On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

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• 作者：I. A. Prudaev ; V. V. Kopyev ; I. S. Romanov ; V. L. Oleynik
• 刊名：Semiconductors
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：51
• 期：2
• 页码：232-238
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Magnetism, Magnetic Materials; Physics, general;
• 出版者：Pleiades Publishing
• ISSN：1090-6479
• 卷排序：51

文摘

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.