Thermo-Mechanical Stress in High-Frequency Vacuum Electron Devices
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- 作者：Diana Gamzina ; Neville C. Luhmann Jr.…
- 关键词：Vacuum electronics ; Terahertz ; Thermal stress ; High frequency ; Anisotropic
- 刊名：Journal of Infrared, Millimeter, and Terahertz Waves
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：38
- 期：1
- 页码：47-61
- 全文大小：
- 刊物类别：Physics and Astronomy
- 刊物主题：Electrical Engineering; Electronics and Microelectronics, Instrumentation; Classical Electrodynamics;
- 出版者：Springer US
- ISSN：1866-6906
- 卷排序：38
文摘
Analysis of the thermo-mechanical performance of high-frequency vacuum electron devices is essential to the advancement of RF sources towards high-power generation. Operation in an ultra-high vacuum environment, space restricting magnetic focusing, and limited material options are just some of the constraints that complicate thermal management in a high-power VED. An analytical method for evaluating temperature, stress, and deformation distribution in thin vacuum-to-cooling walls is presented, accounting for anisotropic material properties. Thin plate geometry is used and analytical expressions are developed for thermo-mechanical analysis that includes the microstructure effects of grain orientations. The method presented evaluates the maximum allowable heat flux that can be used to establish the power-handling limitation of high-frequency VEDs prior to full-scale design, accelerating time-to-manufacture.