High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base

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• 作者：M. E. Levinshtein ; T. T. Mnatsakanov ; S. N. Yurkov ; A. G. Tandoev…
• 刊名：Semiconductors
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：50
• 期：3
• 页码：404-410
• 全文大小：246 KB
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• 作者单位：M. E. Levinshtein (1)
  T. T. Mnatsakanov (2)
  S. N. Yurkov (2)
  A. G. Tandoev (2)
  Sei-Hyung Ryu (3)
  J. W. Palmour (3)
  
  1. Ioffe Physical–Technical Institute, St. Petersburg, 194021, Russia
  2. All-Russia Electrotechnical Institute, Moscow, 111250, Russia
  3. Cree Inc., 4600 Silicon Dr., Durham, NC, 27703, USA
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

The possibility of creating a high-voltage SiC thyristor with an n-type blocking base is analyzed. It is shown that a thyristor structure fabricated as an “analog” of a modern thyristor structure with a p-type blocking base, i.e., with the same layer thicknesses and replaced doping types (donors instead of acceptors, and vice versa), cannot be turned-on at any input signal level. At room temperature, a structure with an n-type blocking base and acceptable parameters can only be obtained in the absence of a stop layer. In this case, however, the maximum blocking voltage is approximately two times lower than that for a thyristor with a p-type blocking base of the same thickness. In the presence of a stop layer, a portion of an S-shaped negative differential resistance appears at room temperature in the forward current–voltage characteristic of the thyristor with an n-type blocking base. This effect is due to the violation and subsequent restoration of neutrality. At ambient temperatures of T ≥ 150°C, the current–voltage characteristics of the thyristor with the n-type blocking base become quite acceptable even in the presence of a stop layer.