Optoeletronic investigation of Cu2ZnSn(S,Se)4 thin-films & Cu2ZnSn(S,Se)4/CdS interface with scanning probe microscopy

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• 作者：Jiangjun Li ; Yugang Zou ; Ting Chen ; Jinsong Hu ; Dong Wang…
• 关键词：CZTSSe ; CdS ; GBs ; heterojunction ; KPFM ; c ; AFM
• 刊名：SCIENCE CHINA Chemistry
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：59
• 期：2
• 页码：231-236
• 全文大小：1,468 KB
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• 作者单位：Jiangjun Li (1)
  Yugang Zou (1)
  Ting Chen (1)
  Jinsong Hu (1)
  Dong Wang (1)
  Li-Jun Wan (1)
  
  1. Beijing National Laboratory for Molecular Science; Key Laboratory of Molecular Nanostructure and Nanotechnology; Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Chinese Library of Science
  Chemistry
  
• 出版者：Science China Press, co-published with Springer
• ISSN：1869-1870

文摘

The kesterite-structured semiconductor Cu₂ZnSn(S,Se)₄ (CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere. Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy. Before and after irradiation, no marked potential bending and very low current flow are observed at GBs, suggesting that GBs behave as a charge recombination site and an obstacle for charge transport. Furthermore, CdS nano-islands are synthesized via successive ionic layer adsorption and reaction (SILAR) method on the surface of CZTSSe. By comparing the work function and current flow change of CZTSSe and CdS in dark and under illumination, we demonstrate photo-induced electrons and holes are separated at the interface of p-n junction and transferred in CdS and CZTSSe, respectively. Keywords CZTSSe CdS GBs heterojunction KPFM c-AFM