Optimization of Inkjet-Printed 6,13-Bis(triisopropylsilylethynyl) pentacene Using Photolithography-Defined Structures

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• 作者：D. L. Kabir ; I. Mejia ; M. R. Perez…
• 关键词：Inkjet printing ; triisopropylsilylethynyl (TIPS) ; pentacene ; organic thin ; film transistor (OTFT) ; photolithography
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：January 2015
• 年：2015
• 卷：44
• 期：1
• 页码：490-496
• 全文大小：872 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

In this work, the performance of inkjet-printed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic thin-film transistors (OTFTs) was studied under various printing conditions using photolithography-defined test structures. OTFTs were printed from TIPS-pentacene solutions with several concentrations, and the impact of printing temperature as well as the amount of material printed was studied. A hybrid approach that includes wells defined by a photolithography process and printed TIPS solution is demonstrated. The results show that the mobility of the printed OTFTs increases with increasing solution concentration, with a maximum mobility for concentration of 50?mg/mL and substrate temperature of 50°C. X-ray diffraction analysis showed the presence of the thin-film phase for all of the TIPS concentrations, with strong and sharp preferential orientation along the (001) direction without any disruption in molecular packing with increasing TIPS thickness. Optimized OTFTs fabricated with this technique show mobilities of 5?×?10??cm2/V-s, threshold voltages (V T) in the range of ??V, and subthreshold slopes of approximately 0.5?V/dec. On–off current ratios up to 106 were also achieved.