Photocurrent multiplication characteristics of zinc phthalocyanine organic thin film transistor

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• 作者：Y. S. Zhang ; D. X. Wang ; Z. Y. Wang ; Y. Y. Wang
• 关键词：Photocurrent multiplication characteristics ; Organic thin film transistor ; ZnPc ; Photoelectric responsivity
• 刊名：Optical and Quantum Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：48
• 期：1
• 全文大小：581 KB
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• 作者单位：Y. S. Zhang (1)
  D. X. Wang (1)
  Z. Y. Wang (1)
  Y. Y. Wang (1)
  
  1. Key Laboratory of Engineering Dielectrics and Its Application, Department of Electronic Science and Technology, Harbin University of Science and Technology, Harbin, 150080, China
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

Organic thin film transistors have been fabricated by vacuum evaporation and magnetron sputtering. The structure of ZnPc organic thin film transistor is ITO/ZnPc/Al/ZnPc/Cu. ZnPc material has good photosensitive properties, which is the active layer in this photoelectric device. The performance of this device is superior by detecting this device and analyzing its photoelectric characteristics, When the 351 nm light irradiates the device, we can observe operating current increased obviously. The maximum value of 尾 is 214.97. When V_ec = 3 V, photocurrent amplification factor changes in the range of 1.92鈥?.76. Moreover, the photoelectric responsivity of this device is very high. When V_ec = 3 V, photoelectric responsivity can reach 5.347 A/W. Keywords Photocurrent multiplication characteristics Organic thin film transistor ZnPc Photoelectric responsivity