Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography

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• 作者：V. I. Egorkin ; A. A. Zaitsev ; S. S. Shmelev
• 关键词：nanoimprint lithography ; p ; HEMT transistor ; T ; shaped gate
• 刊名：Russian Microelectronics
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：45
• 期：7
• 页码：455-459
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Electrical Engineering;
• 出版者：Pleiades Publishing
• ISSN：1608-3415
• 卷排序：45

文摘

The results devoted to the development of a method for creating an RF transistor, in which a T-shaped gate is formed by nanoimprint lithography, are presented. The characteristics of GaAs p-HEMT transistors have been studied. The developed transistor has a gate “foot” length of the order of 250 nm and a maximum transconductance of more than 350 mS/mm. The maximum frequency of current amplification f_t is 40 GHz at the drain-source voltage V_DS = 1.4 V and the maximum frequency of the power gain f_max is 50 GHz at V_DS = 3 V.