Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection
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- 作者：Divya Sethi ; Manjit Kaur ; Gurmohan Singh
- 关键词：CMOS ; CNT ; CNFET ; Binary CAM ; Ternary CAM ; SNM ; Chiral vector ; Threshold voltage
- 刊名：Journal of Computational Electronics
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：16
- 期：1
- 页码：106-114
- 全文大小：
- 刊物类别：Engineering
- 刊物主题：Appl.Mathematics/Computational Methods of Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering;
- 出版者：Springer US
- ISSN：1572-8137
- 卷排序：16
文摘
The carbon nanotube field-effect transistor (CNFET) is emerging as one of the most promising alternatives to complementary metal–oxide–semiconductor (CMOS) transistors due to its one-dimensional (1-D) band structure, low off-current capability, near-ballistic transport operation, high stability, and low power consumption. This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. While selecting the chirality, SNM, PDP, and search time are considered as figures of merit. In this TCAM cell design, we apply the same chirality for all CNFETs of the same type. Extensive HSPICE simulations have been performed for computation of performance parameters using the Stanford University CNFET model. Comparison of CNFET- and CMOS-based TCAM cells has been carried out at the 16-nm technology node. The results show that the CNFET-based TCAM cell exhibits significant improvements of PDP, i.e., by 38 % during write operation and 98 % during search operation, and 53 % in SNM, compared with its CMOS counterpart. It is also observed that the best chirality for the TCAM cell design is (22, 19, 0) or (10, 19, 0) from the point of view of SNM and PDP, respectively.