A direct atomic layer deposition method for growth of ultra-thin lubricant tungsten disulfide films

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• 作者：YongFeng Sun ; ZhiMin Chai ; XinChun Lu ; DanNong He
• 关键词：atomic layer deposition ; tungsten disulfide ; crystal orientation ; friction
• 刊名：Science China Technological Sciences
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：60
• 期：1
• 页码：51-57
• 全文大小：2050KB
• 刊物类别：Engineering
• 刊物主题：Engineering, general;
• 出版者：Science China Press
• ISSN：1869-1900
• 卷排序：60

文摘

We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide (WS₂) films. The WS₂ films were deposited on a Si (100) substrate and a zinc sulfide (ZnS) film coated the Si (100) substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS₂ films. The thickness of the WS₂ films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS₂ films deposited on both substrates are ~175 nm and have (002) and (101) crystal orientations. The WS₂ film deposited on the ZnS coated Si substrate exhibits a stronger (002) orientation and a denser crystal structure than that deposited on the Si substrate. The WS₂ films on both substrates have low friction coefficients. However, due to the stronger (002) orientation and denser crystal structure, the friction coefficient of the WS₂ film deposited on ZnS coated Si substrate is smaller with longer wear life.