Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes
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- 作者：Seung-Won Yeom ; Hyeon Jun Ha ; Junsu Park…
- 关键词：Oxygen vacancy ; ReRAM ; Resistive switching ; TiO2 ; Poole ; Frenkel emission ; Flexible electronics ; Transparent electronics
- 刊名：Journal of the Korean Physical Society
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：69
- 期：11
- 页码：1613-1618
- 全文大小：
- 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
- 出版者：The Korean Physical Society
- ISSN：1976-8524
- 卷排序：69
文摘
We fabricated transparent indium zinc oxide (IZO)/TiO2/IZO devices on flexible polyethylene phthalate (PET) substrates. These devices demonstrate bipolar resistive switching behavior, exhibit a transmittance greater than 80 % for visible light, and have stable resistive switching properties, including long retention and good endurance. In addition, the devices were investigated based on their temperature dependence; the results show metallic properties in the low-resistance state (LRS) and semiconducting properties in the high-resistance state (HRS). The conduction mechanism for resistive switching in our device was well-fitted with Ohmic conduction in the LRS and Poole-Frenkel emission in the HRS. The mechanism could be explained by the formation and the rupture of the conduction paths formed by the movement of oxygen ions and vacancies. Moreover, acute bending of the devices did not affect the memory characteristics because of the pliability of both the IZO electrodes and the thin oxide layer. These results indicate potential applications as resistive random access memories in future flexible, transparent electronic devices.