Manipulating Electronic States at Oxide Interfaces Using Focused Micro X-Rays from Standard Lab Sources

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• 作者：Nicola Poccia (1) (2)
  Alessandro Ricci (2) (3)
  Francesco Coneri (1)
  Martin Stehno (1)
  Gaetano Campi (4)
  Nicola Demitri (5)
  Giorgio Bais (5)
  X. Renshaw Wang (1)
  H. Hilgenkamp (1)
  
  1. MESA + Institute for Nanotechnology ; University of Twente ; P. O. Box 217 ; 7500AE ; Enschede ; The Netherlands
  2. RICMASS Rome International Center for Materials Science Superstripes ; via dei Sabelli 119A ; 00185 ; Rome ; Italy
  3. Deutsches Elektronen-Synchrotron DESY ; Notkestra脽e 85 ; D-22607 ; Hamburg ; Germany
  4. Institute of Crystallography ; CNR ; via Salaria Km 29.300 ; 00015 ; Monterotondo Roma ; Italy
  5. Elettra Sincrotrone Trieste ; Strada Statale 14-km 163 ; 5 ; AREA Science Park ; 34149 ; Basovizza ; Trieste ; Italy
  
• 关键词：Functional oxides ; Focused X ; ray ; Quasi ; twodimensional electron gas ; Resistive switching
• 刊名：Journal of Superconductivity Incorporating Novel Magnetism
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：28
• 期：4
• 页码：1267-1272
• 全文大小：890 KB
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• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Superconductivity, Superfluidity and Quantum Fluids
  Magnetism and Magnetic Materials
  Condensed Matter
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1557-1947

文摘

Recently, X-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization, and to probe their structure. Here, we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the two-dimensional electron gas at the interface between the complex oxide materials LaAlO 3 and SrTiO 3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high-resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources.