Photo-Fries-based photosensitive polymeric interlayers for patterned organic devices
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  • 作者:Alberto Montaigne?Ramil (1) Alberto.Montaigne@jku.at
    Gerardo Hernandez-Sosa (2)
    Thomas Griesser (3)
    Clemens Simbrunner (2)
    Thomas H?fler (4)
    Gregor Trimmel (4)
    Wolfgang Kern (3)
    Quan Shen (5)
    Christian Teichert (5)
    Günther Schwabegger (2)
    Helmut Sitter (2)
    Niyazi Serdar Sariciftci (1)
  • 刊名:Applied Physics A: Materials Science & Processing
  • 出版年:2012
  • 出版时间:June 2012
  • 年:2012
  • 卷:107
  • 期:4
  • 页码:985-993
  • 全文大小:738.3 KB
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  • 作者单位:1. Linz Institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University, Altenbergerstrasse 69, Linz, 4040 Austria2. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrasse 69, Linz, 4040 Austria3. Institute of Chemistry of Polymeric Materials, University of Leoben, Otto Gl?ckel-Strasse 2, 8700 Leoben, Austria4. Institute for Chemistry and Technology of Materials, Graz University of Technology, Stremayrgasse 9, Graz, 8010 Austria5. Institute for Physics, University of Leoben, Franz-Josef Strasse 18, 8700 Leoben, Austria
  • 刊物类别:Physics and Astronomy
  • 刊物主题:Physics
    Condensed Matter
    Optical and Electronic Materials
    Nanotechnology
    Characterization and Evaluation Materials
    Surfaces and Interfaces and Thin Films
    Operating Procedures and Materials Treatment
  • 出版者:Springer Berlin / Heidelberg
  • ISSN:1432-0630
文摘
This work reports on the investigation of the photosensitive polymer poly(diphenyl bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylate) (PPNB), which undergoes the photo-Fries rearrangement upon illumination with UV-light, used as interfacial layers in organic electronic devices. Two cases were investigated: the use of a blend of PPNB with poly-vinylcarbazole (PVK) as an interlayer in para-sexiphenyl (PSP) based organic light emitting diodes (OLEDs) and the use of PPNB as gate dielectric layer in organic field effect transistors (OFETs). The photo-Fries rearrangement reaction causes a change of the polymer chemical structure resulting in a change of its physical and chemical properties. The electroluminescence spectra and emission of the PSP OLEDs are not affected when fabricated with a non-UV-illuminated PPNB:PVK blend. However, the electroluminescence is totally quenched in those OLEDs fabricated with UV-illuminated PPNB:PVK blend. Although the dielectric constant of PPNB increases upon UV-treatment, it is demonstrated that those OFETs built with UV-treated PPNB as gate dielectric have lower performance than those OFETs built with non-UV-treated PPNB. Furthermore, the effect of the UV-illumination of PPNB and PPNB:PVK blend on the growth of the small molecules C60 and PSP has been studied by atomic force microscopy. Using photolithography, this kind of photochemistry can be performed to spatially control and tune the optical and electrical performance of organic electronic devices.

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